Результаты поиска NTD4969N-1G
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- ON Semiconductor — ON Semiconductor NTD4969N-1G Configuration: Single Continuous Drain Current: 12.7 A Current - Continuous Drain (id) @ 25?° C: 9.4A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 36 s Gate Charge (qg) @ Vgs: 9nC @ 4.5V Gate Charge Qg: 9 nC Input Capacitance (ciss) @ Vds: 837pF @ 15V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: TO-251-3 Long Leads, IPak, TO-251AB Power - Max: 1.38W Power Dissipation: 1.38 W, 2.56 W, 26.3 W Rds On (max) @ Id, Vgs: 9 mOhm @ 30A, 10V Resistance Drain-source Rds (on): 19 mOhms Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2.5V @ 250?µA RoHS: yes Drain-Source Breakdown Voltage: 30 V Resistance Drain-Source RDS (on): 19 mOhms Forward Transconductance gFS (Max / Min): 36 s