Результаты поиска NTD4965NT4G

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• NTD4965NT4G
  ON Semiconductor — ON Semiconductor NTD4965NT4G Configuration: Single Continuous Drain Current: 17.8 A Current - Continuous Drain (id) @ 25В° C: 13A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 52 s Gate Charge (qg) @ Vgs: 17.2nC @ 4.5V Gate Charge Qg: 17.2 nC Input Capacitance (ciss) @ Vds: 1710pF @ 15V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Power - Max: 1.39W Power Dissipation: 1.39 W, 2.6 W, 38.5 W Rds On (max) @ Id, Vgs: 4.7 mOhm @ 30A, 10V Resistance Drain-source Rds (on): 4.7 mOhms Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2.5V @ 250ВµA RoHS: yes Drain-Source Breakdown Voltage: 30 V Resistance Drain-Source RDS (on): 4.7 mOhms Forward Transconductance gFS (Max / Min): 52 s