Результаты поиска NJVMJD32CT4G

Найдено 2 результатов.

• NJVMJD32CT4G
  ON Semiconductor — ON Semiconductor NJVMJD32CT4G RoHS: yes Configuration: Single Transistor Polarity: PNP Collector- Emitter Voltage VCEO Max: 100 V Emitter- Base Voltage VEBO: 5 V Collector- Base Voltage VCBO: 100 V Maximum Collector Cut-off Current: 50 uA Power Dissipation: 15 W Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: DPAK Continuous Collector Current: 3 A DC Collector/Base Gain hfe Min: 25 Gain Bandwidth Product fT: 3 MHz Minimum Operating Temperature: - 65 C
• NJVMJD32CT4G
  ON Semiconductor — ON Semiconductor NJVMJD32CT4G RoHS: yes Configuration: Single Transistor Polarity: PNP Collector- Emitter Voltage VCEO Max: 100 V Emitter- Base Voltage VEBO: 5 V Collector- Base Voltage VCBO: 100 V Maximum Collector Cut-off Current: 50 uA Power Dissipation: 15 W Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: DPAK Continuous Collector Current: 3 A DC Collector/Base Gain hfe Min: 25 Gain Bandwidth Product fT: 3 MHz Minimum Operating Temperature: - 65 C