Результаты поиска NE5520379A-A

Найдено 2 результатов.

• NE5520379A-A
  CEL (California Eastern Laboratories) — CEL (California Eastern Laboratories) NE5520379A-A Continuous Drain Current: 1.5 A Current - Test: - Current Rating: 1.5A Drain-source Breakdown Voltage: 15 V Forward Transconductance Gfs (max / Min): 2.5 S Frequency: 915MHz Gain: 16dB Gate-source Breakdown Voltage: 5 V ID_COMPONENTS: 1949208 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Mounting Style: SMD/SMT Noise Figure: - Package / Case: 79A Power - Output: 35.5dBm Power Dissipation: 20 W Series: - Transistor Polarity: N-Channel Transistor Type: LDMOS Voltage - Rated: 15V Voltage - Test: 3.2V Product Category: Transistors RF MOSFET Power RoHS: yes Drain-Source Breakdown Voltage: 15 V Gate-Source Breakdown Voltage: 5 V Forward Transconductance gFS (Max / Min): 2.5 S
• NE5520379A-A
  CEL (California Eastern Laboratories) — CEL (California Eastern Laboratories) NE5520379A-A Continuous Drain Current: 1.5 A Current - Test: - Current Rating: 1.5A Drain-source Breakdown Voltage: 15 V Forward Transconductance Gfs (max / Min): 2.5 S Frequency: 915MHz Gain: 16dB Gate-source Breakdown Voltage: 5 V ID_COMPONENTS: 1949208 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Mounting Style: SMD/SMT Noise Figure: - Package / Case: 79A Power - Output: 35.5dBm Power Dissipation: 20 W Series: - Transistor Polarity: N-Channel Transistor Type: LDMOS Voltage - Rated: 15V Voltage - Test: 3.2V Product Category: Transistors RF MOSFET Power RoHS: yes Drain-Source Breakdown Voltage: 15 V Gate-Source Breakdown Voltage: 5 V Forward Transconductance gFS (Max / Min): 2.5 S