Результаты поиска MMBT3906LT1G

Найдено 5 результатов.

• MMBT3906LT1G
  ON Semiconductor — Transistors Bipolar- General Purpose 200mA 40V PNP
• MMBT3906LT1G
  ON Semiconductor — TRANS GP SS PNP 40V SOT23
• MMBT3906LT1G
  ON Semiconductor — TRANS GP SS PNP 40V SOT23
• MMBT3906LT1G
  ON Semiconductor — TRANS GP SS PNP 40V SOT23
• SMMBT3906LT1G
  ON Semiconductor — ON Semiconductor SMMBT3906LT1G Collector- Base Voltage Vcbo: 40 V Collector- Emitter Voltage Vceo Max: 40 V Configuration: Single Dc Collector/base Gain Hfe Min: 60 at 0.1 mA at 1 V, 80 at 1 mA at 1 V, 100 at 10 mA at 1 V, 60 at 50 mA at 1 V, 30 at 100 mA at 1 V Dc Current Gain Hfe Max: 60 at 0.1 mA at 1 V Emitter- Base Voltage Vebo: 5 V Gain Bandwidth Product Ft: 250 MHz Maximum Dc Collector Current: 0.2 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 300 mW Minimum Operating Temperature: - 55 C Package / Case: SOT-23 Transistor Polarity: PNP Collector- Base Voltage VCBO: 40 V Collector- Emitter Voltage VCEO Max: 40 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.2 A Gain Bandwidth Product fT: 250 MHz DC Collector/Base Gain hfe Min: 60 at 0.1 mA at 1 V, 80 at 1 mA at 1 V, 100 at 10 mA at 1 V, 60 at 50 mA at 1 V, 30 at 100 mA at 1 V DC Current Gain hFE Max: 60 at 0.1 mA at 1 V