Результаты поиска MMBT 3906 LT1
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- Infineon Technologies — Infineon Technologies MMBT 3906 LT1 Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: PNP Collector- Base Voltage VCBO: 40 V Collector- Emitter Voltage VCEO Max: 40 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 0.2 A Gain Bandwidth Product fT: 250 MHz (Min) DC Collector/Base Gain hfe Min: 60 at 10 uA at 1 V Maximum Operating Temperature: + 150 C Package / Case: SOT-23 Maximum Power Dissipation: 330 mW Part # Aliases: MMBT3906LT1HTSA1 MMBT3906LT1XT SP000011678