Результаты поиска MJD44H11T4G

Найдено 5 результатов.

• MJD44H11T4G
  ON Semiconductor — Transistors Bipolar- General Purpose 8A 80V 20W NPN
• MJD44H11T4G
  ON Semiconductor — TRANS PWR NPN 8A 80V DPAK
• MJD44H11T4G
  ON Semiconductor — TRANS PWR NPN 8A 80V DPAK
• MJD44H11T4G
  ON Semiconductor — TRANS PWR NPN 8A 80V DPAK
• NJVMJD44H11T4G
  ON Semiconductor — ON Semiconductor NJVMJD44H11T4G Configuration: Single Transistor Polarity: NPN Collector- Emitter Voltage VCEO Max: 80 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 8 A Gain Bandwidth Product fT: 85 MHz DC Collector/Base Gain hfe Min: 60 at 2 A at 1 V, 40 at 4 A at 1 V Maximum Operating Temperature: + 150 C Package / Case: DPAK DC Current Gain hFE Max: 60 at 2 A at 1 V Maximum Power Dissipation: 1750 mW Minimum Operating Temperature: - 55 C