Результаты поиска LM358N/NOPB
Найдено 3 результатов.
- National Semiconductor — National Semiconductor LM358N/NOPB -3db Bandwidth: - Amplifier Type: General Purpose Bandwidth: 1 MHz Channel Separation: -120 Common Mode Rejection Ratio: 85 Current - Input Bias: 45nA Current - Output / Channel: 40mA Current - Supply: 1mA Current, Input Bias: 45 nA Current, Input Offset: 5 nA Current, Output: 40 mA Current, Supply: 0.5 mA Gain Bandwidth Product: 1MHz Impedance, Thermal: 120 В°C/W Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device Mounting Type: Through Hole Number Of Amplifiers: Dual Number Of Circuits: 2 Operating Temperature: 0В°C ~ 70В°C Output Type: - Package / Case: 8-DIP (0.300", 7.62mm) Package Type: MDIP-8 Power Dissipation: 830 mW Series: - Slew Rate: 0.1 V/Вµs Temperature, Operating, Range: 0 to +70 В°C Voltage - Input Offset: 2000ВµV Voltage - Supply, Single/dual (В±): 3 V ~ 32 V, В±1.5 V ~ 16 V Voltage, Gain: 100 V/mV Voltage, Input: -0.3 to +32 V Voltage, Offset: 2 mV Voltage, Output, High: 28 V Voltage, Output, Low: 5 mV Voltage, Supply: 5 V Other Names: *LM358N, *LM358N/NOPB, LM358, LM358NNS
- National Semiconductor — National Semiconductor LM358N/NOPB -3db Bandwidth: - Amplifier Type: General Purpose Bandwidth: 1 MHz Channel Separation: -120 Common Mode Rejection Ratio: 85 Current - Input Bias: 45nA Current - Output / Channel: 40mA Current - Supply: 1mA Current, Input Bias: 45 nA Current, Input Offset: 5 nA Current, Output: 40 mA Current, Supply: 0.5 mA Gain Bandwidth Product: 1MHz Impedance, Thermal: 120 В°C/W Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device Mounting Type: Through Hole Number Of Amplifiers: Dual Number Of Circuits: 2 Operating Temperature: 0В°C ~ 70В°C Output Type: - Package / Case: 8-DIP (0.300", 7.62mm) Package Type: MDIP-8 Power Dissipation: 830 mW Series: - Slew Rate: 0.1 V/Вµs Temperature, Operating, Range: 0 to +70 В°C Voltage - Input Offset: 2000ВµV Voltage - Supply, Single/dual (В±): 3 V ~ 32 V, В±1.5 V ~ 16 V Voltage, Gain: 100 V/mV Voltage, Input: -0.3 to +32 V Voltage, Offset: 2 mV Voltage, Output, High: 28 V Voltage, Output, Low: 5 mV Voltage, Supply: 5 V Other Names: *LM358N, *LM358N/NOPB, LM358, LM358NNS
- TI (Texas Instruments) — National Semiconductor LM358N/NOPB -3db Bandwidth: - Amplifier Type: General Purpose Bandwidth: 1 MHz Channel Separation: -120 Common Mode Rejection Ratio: 85 Current - Input Bias: 45nA Current - Output / Channel: 40mA Current - Supply: 1mA Current, Input Bias: 45 nA Current, Input Offset: 5 nA Current, Output: 40 mA Current, Supply: 0.5 mA Gain Bandwidth Product: 1MHz Impedance, Thermal: 120 В°C/W Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device Mounting Type: Through Hole Number Of Amplifiers: Dual Number Of Circuits: 2 Operating Temperature: 0В°C ~ 70В°C Output Type: - Package / Case: 8-DIP (0.300", 7.62mm) Package Type: MDIP-8 Power Dissipation: 830 mW Series: - Slew Rate: 0.1 V/Вµs Temperature, Operating, Range: 0 to +70 В°C Voltage - Input Offset: 2000ВµV Voltage - Supply, Single/dual (В±): 3 V ~ 32 V, В±1.5 V ~ 16 V Voltage, Gain: 100 V/mV Voltage, Input: -0.3 to +32 V Voltage, Offset: 2 mV Voltage, Output, High: 28 V Voltage, Output, Low: 5 mV Voltage, Supply: 5 V Other Names: *LM358N, *LM358N/NOPB, LM358, LM358NNS
