Результаты поиска LF411CN/NOPB

Найдено 4 результатов.

• LF411CN/NOPB
  National Semiconductor — National Semiconductor LF411CN/NOPB -3db Bandwidth: - Amplifier Type: J-FET Bandwidth: 4 MHz Common Mode Rejection Ratio: 100 Common Mode Rejection Ratio (min): 70 dB Current - Input Bias: 50pA Current - Output / Channel: - Current - Supply: 1.8mA Current, Input Bias: 50 pA Current, Input Offset: 25 pA Current, Output: 25 mA Current, Supply: 1.8 mA Gain Bandwidth Product: 4MHz Harmonic Distortion: 0.02 % Impedance, Thermal: 120 В°C/W Input Offset Voltage: 2 mV at +/- 15 V Input Voltage Range (max): 44 V Input Voltage Range (min): 10 V Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device Maximum Dual Supply Voltage: +/- 18 V Maximum Operating Temperature: + 70 C Maximum Power Dissipation: 670 mW Minimum Operating Temperature: 0 C Mounting Style: Through Hole Mounting Type: Through Hole Number Of Amplifiers: Single Number Of Channels: 1 Number Of Circuits: 1 Operating Temperature: 0В°C ~ 70В°C Output Type: - Package / Case: 8-DIP (0.300", 7.62mm) Package Type: MDIP-8 Power Dissipation: 670 mW Resistance, Input: 10^12 Ohms Series: BI-FET IIв„ў Slew Rate: 15 V/Вµs Supply Current: 3.4 mA at +/- 15 V Temperature, Operating, Range: 0 to +70 В°C Voltage - Input Offset: 800ВµV Voltage - Supply, Single/dual (В±): 10 V ~ 36 V, В±5 V ~ 18 V Voltage Gain Db: 106.02 dB Voltage, Gain: 200 V/mV Voltage, Input: 10 to 44 V Voltage, Noise: 25 nV/sqrt Hz Voltage, Offset: 0.8 mV Voltage, Output, High: 13.5 V Voltage, Output, Low: -13.5 V Voltage, Supply: В±15 V Other Names: *LF411CN, *LF411CN/NOPB, LF411, LF411CN
• LF411CN/NOPB
  National Semiconductor — National Semiconductor LF411CN/NOPB -3db Bandwidth: - Amplifier Type: J-FET Bandwidth: 4 MHz Common Mode Rejection Ratio: 100 Common Mode Rejection Ratio (min): 70 dB Current - Input Bias: 50pA Current - Output / Channel: - Current - Supply: 1.8mA Current, Input Bias: 50 pA Current, Input Offset: 25 pA Current, Output: 25 mA Current, Supply: 1.8 mA Gain Bandwidth Product: 4MHz Harmonic Distortion: 0.02 % Impedance, Thermal: 120 В°C/W Input Offset Voltage: 2 mV at +/- 15 V Input Voltage Range (max): 44 V Input Voltage Range (min): 10 V Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device Maximum Dual Supply Voltage: +/- 18 V Maximum Operating Temperature: + 70 C Maximum Power Dissipation: 670 mW Minimum Operating Temperature: 0 C Mounting Style: Through Hole Mounting Type: Through Hole Number Of Amplifiers: Single Number Of Channels: 1 Number Of Circuits: 1 Operating Temperature: 0В°C ~ 70В°C Output Type: - Package / Case: 8-DIP (0.300", 7.62mm) Package Type: MDIP-8 Power Dissipation: 670 mW Resistance, Input: 10^12 Ohms Series: BI-FET IIв„ў Slew Rate: 15 V/Вµs Supply Current: 3.4 mA at +/- 15 V Temperature, Operating, Range: 0 to +70 В°C Voltage - Input Offset: 800ВµV Voltage - Supply, Single/dual (В±): 10 V ~ 36 V, В±5 V ~ 18 V Voltage Gain Db: 106.02 dB Voltage, Gain: 200 V/mV Voltage, Input: 10 to 44 V Voltage, Noise: 25 nV/sqrt Hz Voltage, Offset: 0.8 mV Voltage, Output, High: 13.5 V Voltage, Output, Low: -13.5 V Voltage, Supply: В±15 V Other Names: *LF411CN, *LF411CN/NOPB, LF411, LF411CN
• LF411CN/NOPB
  TI (Texas Instruments) — National Semiconductor LF411CN/NOPB -3db Bandwidth: - Amplifier Type: J-FET Bandwidth: 4 MHz Common Mode Rejection Ratio: 100 Common Mode Rejection Ratio (min): 70 dB Current - Input Bias: 50pA Current - Output / Channel: - Current - Supply: 1.8mA Current, Input Bias: 50 pA Current, Input Offset: 25 pA Current, Output: 25 mA Current, Supply: 1.8 mA Gain Bandwidth Product: 4MHz Harmonic Distortion: 0.02 % Impedance, Thermal: 120 В°C/W Input Offset Voltage: 2 mV at +/- 15 V Input Voltage Range (max): 44 V Input Voltage Range (min): 10 V Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device Maximum Dual Supply Voltage: +/- 18 V Maximum Operating Temperature: + 70 C Maximum Power Dissipation: 670 mW Minimum Operating Temperature: 0 C Mounting Style: Through Hole Mounting Type: Through Hole Number Of Amplifiers: Single Number Of Channels: 1 Number Of Circuits: 1 Operating Temperature: 0В°C ~ 70В°C Output Type: - Package / Case: 8-DIP (0.300", 7.62mm) Package Type: MDIP-8 Power Dissipation: 670 mW Resistance, Input: 10^12 Ohms Series: BI-FET IIв„ў Slew Rate: 15 V/Вµs Supply Current: 3.4 mA at +/- 15 V Temperature, Operating, Range: 0 to +70 В°C Voltage - Input Offset: 800ВµV Voltage - Supply, Single/dual (В±): 10 V ~ 36 V, В±5 V ~ 18 V Voltage Gain Db: 106.02 dB Voltage, Gain: 200 V/mV Voltage, Input: 10 to 44 V Voltage, Noise: 25 nV/sqrt Hz Voltage, Offset: 0.8 mV Voltage, Output, High: 13.5 V Voltage, Output, Low: -13.5 V Voltage, Supply: В±15 V Other Names: *LF411CN, *LF411CN/NOPB, LF411, LF411CN
• HFV7/024-H4ST-R
  HONGFA —