Результаты поиска LF356N/NOPB
Найдено 2 результатов.
- National Semiconductor — National Semiconductor LF356N/NOPB -3db Bandwidth: - Amplifier Type: J-FET Bandwidth: 5 MHz Common Mode Rejection Ratio: 80 Common Mode Rejection Ratio (min): 80 dB Current - Input Bias: 30pA Current - Output / Channel: - Current - Supply: 5mA Current, Input Bias: 30 pA Current, Input Offset: 3 pA Current, Output: 25 mA Current, Supply: 5 mA Gain Bandwidth Product: 5MHz Impedance, Thermal: 130 В°C/W Input Offset Voltage: 10 mV at +/- 15 V Input Voltage Range (max): 36 V Input Voltage Range (min): 10 V Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device Maximum Dual Supply Voltage: +/- 18 V Maximum Operating Temperature: + 70 C Maximum Power Dissipation: 670 mW Minimum Operating Temperature: 0 C Mounting Style: Through Hole Mounting Type: Through Hole Number Of Amplifiers: Single Number Of Channels: 1 Number Of Circuits: 1 Operating Temperature: 0В°C ~ 70В°C Output Type: - Package / Case: 8-DIP (0.300", 7.62mm) Package Type: MDIP-8 Power Dissipation: 670 mW Resistance, Input: 10^12 Ohms Series: BI-FETв„ў Slew Rate: 12 V/Вµs Supply Current: 10 mA at +/- 15 V Temperature, Operating, Range: 0 to +70 В°C Voltage - Input Offset: 3000ВµV Voltage - Supply, Single/dual (В±): 10 V ~ 36 V, В±5 V ~ 18 V Voltage Gain Db: 106.02 dB Voltage, Gain: 200 V/mV Voltage, Input: 10 to 36 V Voltage, Noise: 12 nV/sqrt Hz Voltage, Offset: 3 mV Voltage, Output, High: 13 V Voltage, Output, Low: -13 V Voltage, Supply: В±16 V Other Names: *LF356N, LF356, LF356N
- National Semiconductor — National Semiconductor LF356N/NOPB -3db Bandwidth: - Amplifier Type: J-FET Bandwidth: 5 MHz Common Mode Rejection Ratio: 80 Common Mode Rejection Ratio (min): 80 dB Current - Input Bias: 30pA Current - Output / Channel: - Current - Supply: 5mA Current, Input Bias: 30 pA Current, Input Offset: 3 pA Current, Output: 25 mA Current, Supply: 5 mA Gain Bandwidth Product: 5MHz Impedance, Thermal: 130 В°C/W Input Offset Voltage: 10 mV at +/- 15 V Input Voltage Range (max): 36 V Input Voltage Range (min): 10 V Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device Maximum Dual Supply Voltage: +/- 18 V Maximum Operating Temperature: + 70 C Maximum Power Dissipation: 670 mW Minimum Operating Temperature: 0 C Mounting Style: Through Hole Mounting Type: Through Hole Number Of Amplifiers: Single Number Of Channels: 1 Number Of Circuits: 1 Operating Temperature: 0В°C ~ 70В°C Output Type: - Package / Case: 8-DIP (0.300", 7.62mm) Package Type: MDIP-8 Power Dissipation: 670 mW Resistance, Input: 10^12 Ohms Series: BI-FETв„ў Slew Rate: 12 V/Вµs Supply Current: 10 mA at +/- 15 V Temperature, Operating, Range: 0 to +70 В°C Voltage - Input Offset: 3000ВµV Voltage - Supply, Single/dual (В±): 10 V ~ 36 V, В±5 V ~ 18 V Voltage Gain Db: 106.02 dB Voltage, Gain: 200 V/mV Voltage, Input: 10 to 36 V Voltage, Noise: 12 nV/sqrt Hz Voltage, Offset: 3 mV Voltage, Output, High: 13 V Voltage, Output, Low: -13 V Voltage, Supply: В±16 V Other Names: *LF356N, LF356, LF356N
