Результаты поиска LF356M/NOPB

Найдено 3 результатов.

• LF356M/NOPB
  National Semiconductor — National Semiconductor LF356M/NOPB -3db Bandwidth: - Amplifier Type: J-FET Bandwidth: 5 MHz Common Mode Rejection Ratio: 80 Current - Input Bias: 30pA Current - Output / Channel: - Current - Supply: 5mA Current, Input Bias: 30 pA Current, Input Offset: 3 pA Current, Output: 25 mA Current, Supply: 5 mA Dc: 1018 Gain Bandwidth Product: 5MHz Impedance, Thermal: 195 ?°C/W Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device Mounting Type: Surface Mount Number Of Amplifiers: Single Number Of Circuits: 1 Operating Temperature: 0?°C ~ 70?°C Output Type: - Package / Case: 8-SOIC (3.9mm Width) Package Type: SO-8 Power Dissipation: 380 mW Quantity: 30 Resistance, Input: 10^12 Ohms Series: BI-FET?„? Slew Rate: 12 V/?µs Temperature, Operating, Range: 0 to +70 ?°C Voltage - Input Offset: 3000?µV Voltage - Supply, Single/dual (?±): 10 V ~ 36 V, ?±5 V ~ 18 V Voltage, Gain: 200 V/mV Voltage, Input: 10 to 36 V Voltage, Noise: 12 nV/sqrt Hz Voltage, Offset: 3 mV Voltage, Output, High: 13 V Voltage, Output, Low: -13 V Voltage, Supply: ?±16 V Other Names: *LF356M, *LF356M/NOPB, LF356M
• LF356M/NOPB
  National Semiconductor — National Semiconductor LF356M/NOPB -3db Bandwidth: - Amplifier Type: J-FET Bandwidth: 5 MHz Common Mode Rejection Ratio: 80 Current - Input Bias: 30pA Current - Output / Channel: - Current - Supply: 5mA Current, Input Bias: 30 pA Current, Input Offset: 3 pA Current, Output: 25 mA Current, Supply: 5 mA Dc: 1018 Gain Bandwidth Product: 5MHz Impedance, Thermal: 195 ?°C/W Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device Mounting Type: Surface Mount Number Of Amplifiers: Single Number Of Circuits: 1 Operating Temperature: 0?°C ~ 70?°C Output Type: - Package / Case: 8-SOIC (3.9mm Width) Package Type: SO-8 Power Dissipation: 380 mW Quantity: 30 Resistance, Input: 10^12 Ohms Series: BI-FET?„? Slew Rate: 12 V/?µs Temperature, Operating, Range: 0 to +70 ?°C Voltage - Input Offset: 3000?µV Voltage - Supply, Single/dual (?±): 10 V ~ 36 V, ?±5 V ~ 18 V Voltage, Gain: 200 V/mV Voltage, Input: 10 to 36 V Voltage, Noise: 12 nV/sqrt Hz Voltage, Offset: 3 mV Voltage, Output, High: 13 V Voltage, Output, Low: -13 V Voltage, Supply: ?±16 V Other Names: *LF356M, *LF356M/NOPB, LF356M
• LF356M/NOPB
  TI (Texas Instruments) — National Semiconductor LF356M/NOPB -3db Bandwidth: - Amplifier Type: J-FET Bandwidth: 5 MHz Common Mode Rejection Ratio: 80 Current - Input Bias: 30pA Current - Output / Channel: - Current - Supply: 5mA Current, Input Bias: 30 pA Current, Input Offset: 3 pA Current, Output: 25 mA Current, Supply: 5 mA Dc: 1018 Gain Bandwidth Product: 5MHz Impedance, Thermal: 195 ?°C/W Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device Mounting Type: Surface Mount Number Of Amplifiers: Single Number Of Circuits: 1 Operating Temperature: 0?°C ~ 70?°C Output Type: - Package / Case: 8-SOIC (3.9mm Width) Package Type: SO-8 Power Dissipation: 380 mW Quantity: 30 Resistance, Input: 10^12 Ohms Series: BI-FET?„? Slew Rate: 12 V/?µs Temperature, Operating, Range: 0 to +70 ?°C Voltage - Input Offset: 3000?µV Voltage - Supply, Single/dual (?±): 10 V ~ 36 V, ?±5 V ~ 18 V Voltage, Gain: 200 V/mV Voltage, Input: 10 to 36 V Voltage, Noise: 12 nV/sqrt Hz Voltage, Offset: 3 mV Voltage, Output, High: 13 V Voltage, Output, Low: -13 V Voltage, Supply: ?±16 V Other Names: *LF356M, *LF356M/NOPB, LF356M