Результаты поиска LF353N

Найдено 6 результатов.

• LF353N
  Fairchild Semiconductor — Amplifiers Dual Operational Amp
• LF353N
  STMicroelectronics — Operational Amplifiers Dual Wideband JFET
• LF353-N
  TI (Texas Instruments) —
• LF353N/NOPB
  National Semiconductor — National Semiconductor LF353N/NOPB -3db Bandwidth: - Amplifier Type: J-FET Bandwidth: 4 MHz Channel Separation: -120 Common Mode Rejection Ratio: 100 Current - Input Bias: 50pA Current - Output / Channel: - Current - Supply: 3.6mA Current, Input Bias: 50 pA Current, Input Offset: 25 pA Current, Output: 20 mA Current, Supply: 3.6 mA Dc: N/A Gain Bandwidth Product: 4MHz Harmonic Distortion: 0.02 % Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device Mounting Type: Through Hole Number Of Amplifiers: Dual Number Of Circuits: 2 Operating Temperature: 0?°C ~ 70?°C Output Type: - Package / Case: 8-DIP (0.300", 7.62mm) Package Type: MDIP-8 Quantity: 200 Resistance, Input: 10^12 Ohms Series: BI-FET II?„? Slew Rate: 13 V/?µs Temperature, Operating, Range: 0 to +70 ?°C Voltage - Input Offset: 5000?µV Voltage - Supply, Single/dual (?±): 10 V ~ 36 V, ?±5 V ~ 18 V Voltage, Gain: 100 V/mV Voltage, Input: 10 to 36 V Voltage, Noise: 16 nV/sqrt Hz Voltage, Offset: 5 mV Voltage, Output, High: 13.5 V Voltage, Output, Low: -13.5 V Voltage, Supply: ?±15 V Other Names: *LF353N, LF353, LF353NNS
• LF353N/NOPB
  National Semiconductor — National Semiconductor LF353N/NOPB -3db Bandwidth: - Amplifier Type: J-FET Bandwidth: 4 MHz Channel Separation: -120 Common Mode Rejection Ratio: 100 Current - Input Bias: 50pA Current - Output / Channel: - Current - Supply: 3.6mA Current, Input Bias: 50 pA Current, Input Offset: 25 pA Current, Output: 20 mA Current, Supply: 3.6 mA Dc: N/A Gain Bandwidth Product: 4MHz Harmonic Distortion: 0.02 % Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device Mounting Type: Through Hole Number Of Amplifiers: Dual Number Of Circuits: 2 Operating Temperature: 0?°C ~ 70?°C Output Type: - Package / Case: 8-DIP (0.300", 7.62mm) Package Type: MDIP-8 Quantity: 200 Resistance, Input: 10^12 Ohms Series: BI-FET II?„? Slew Rate: 13 V/?µs Temperature, Operating, Range: 0 to +70 ?°C Voltage - Input Offset: 5000?µV Voltage - Supply, Single/dual (?±): 10 V ~ 36 V, ?±5 V ~ 18 V Voltage, Gain: 100 V/mV Voltage, Input: 10 to 36 V Voltage, Noise: 16 nV/sqrt Hz Voltage, Offset: 5 mV Voltage, Output, High: 13.5 V Voltage, Output, Low: -13.5 V Voltage, Supply: ?±15 V Other Names: *LF353N, LF353, LF353NNS
• LF353N/NOPB
  TI (Texas Instruments) — National Semiconductor LF353N/NOPB -3db Bandwidth: - Amplifier Type: J-FET Bandwidth: 4 MHz Channel Separation: -120 Common Mode Rejection Ratio: 100 Current - Input Bias: 50pA Current - Output / Channel: - Current - Supply: 3.6mA Current, Input Bias: 50 pA Current, Input Offset: 25 pA Current, Output: 20 mA Current, Supply: 3.6 mA Dc: N/A Gain Bandwidth Product: 4MHz Harmonic Distortion: 0.02 % Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device Mounting Type: Through Hole Number Of Amplifiers: Dual Number Of Circuits: 2 Operating Temperature: 0?°C ~ 70?°C Output Type: - Package / Case: 8-DIP (0.300", 7.62mm) Package Type: MDIP-8 Quantity: 200 Resistance, Input: 10^12 Ohms Series: BI-FET II?„? Slew Rate: 13 V/?µs Temperature, Operating, Range: 0 to +70 ?°C Voltage - Input Offset: 5000?µV Voltage - Supply, Single/dual (?±): 10 V ~ 36 V, ?±5 V ~ 18 V Voltage, Gain: 100 V/mV Voltage, Input: 10 to 36 V Voltage, Noise: 16 nV/sqrt Hz Voltage, Offset: 5 mV Voltage, Output, High: 13.5 V Voltage, Output, Low: -13.5 V Voltage, Supply: ?±15 V Other Names: *LF353N, LF353, LF353NNS