Результаты поиска LF353M

Найдено 8 результатов.

• LF353M
  Fairchild Semiconductor — Amplifiers Dual Op amp JFET
• LF353MX
  Fairchild Semiconductor — Amplifiers Dual Op amp JFET
• LF353M/NOPB
  National Semiconductor — National Semiconductor LF353M/NOPB -3db Bandwidth: - Amplifier Type: J-FET Current - Input Bias: 50pA Current - Output / Channel: - Current - Supply: 3.6mA Gain Bandwidth Product: 4MHz Mounting Type: Surface Mount Number Of Circuits: 2 Operating Temperature: 0В°C ~ 70В°C Output Type: - Package / Case: 8-SOIC (3.9mm Width) Series: BI-FET IIв„ў Slew Rate: 13 V/Вµs Voltage - Input Offset: 5000ВµV Voltage - Supply, Single/dual (В±): 10 V ~ 36 V, В±5 V ~ 18 V Other Names: *LF353M, LF353M
• LF353M/NOPB
  TI (Texas Instruments) — National Semiconductor LF353M/NOPB -3db Bandwidth: - Amplifier Type: J-FET Current - Input Bias: 50pA Current - Output / Channel: - Current - Supply: 3.6mA Gain Bandwidth Product: 4MHz Mounting Type: Surface Mount Number Of Circuits: 2 Operating Temperature: 0В°C ~ 70В°C Output Type: - Package / Case: 8-SOIC (3.9mm Width) Series: BI-FET IIв„ў Slew Rate: 13 V/Вµs Voltage - Input Offset: 5000ВµV Voltage - Supply, Single/dual (В±): 10 V ~ 36 V, В±5 V ~ 18 V Other Names: *LF353M, LF353M
• LF353MX/NOPB
  National Semiconductor — National Semiconductor LF353MX/NOPB -3db Bandwidth: - Amplifier Type: J-FET Bandwidth: 4 MHz Channel Separation: -120 Common Mode Rejection Ratio: 100 Current - Input Bias: 50pA Current - Output / Channel: - Current - Supply: 3.6mA Current, Input Bias: 50 pA Current, Input Offset: 25 pA Current, Output: 20 mA Current, Supply: 3.6 mA Gain Bandwidth Product: 4MHz Harmonic Distortion: 0.02 % Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device Leaded Process Compatible: Yes Mounting Type: Surface Mount Number Of Amplifiers: Dual Number Of Circuits: 2 Operating Temperature: 0В°C ~ 70В°C Output Type: - Package / Case: 8-SOIC (3.9mm Width) Package Type: SOIC-8 Peak Reflow Compatible (260 C): Yes Resistance, Input: 10^12 Ohms Rohs Compliant: Yes Series: BI-FET IIв„ў Slew Rate: 13 V/Вµs Temperature, Operating, Range: 0 to +70 В°C Voltage - Input Offset: 5000ВµV Voltage - Supply, Single/dual (В±): 10 V ~ 36 V, В±5 V ~ 18 V Voltage, Gain: 100 V/mV Voltage, Input: 10 to 36 V Voltage, Noise: 16 nV/sqrt Hz Voltage, Offset: 5 mV Voltage, Output, High: 13.5 V Voltage, Output, Low: -13.5 V Voltage, Supply: В±15 V Other Names: LF353MX, LF353MXTR
• LF353MX/NOPB
  National Semiconductor — National Semiconductor LF353MX/NOPB -3db Bandwidth: - Amplifier Type: J-FET Bandwidth: 4 MHz Channel Separation: -120 Common Mode Rejection Ratio: 100 Current - Input Bias: 50pA Current - Output / Channel: - Current - Supply: 3.6mA Current, Input Bias: 50 pA Current, Input Offset: 25 pA Current, Output: 20 mA Current, Supply: 3.6 mA Gain Bandwidth Product: 4MHz Harmonic Distortion: 0.02 % Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device Leaded Process Compatible: Yes Mounting Type: Surface Mount Number Of Amplifiers: Dual Number Of Circuits: 2 Operating Temperature: 0В°C ~ 70В°C Output Type: - Package / Case: 8-SOIC (3.9mm Width) Package Type: SOIC-8 Peak Reflow Compatible (260 C): Yes Resistance, Input: 10^12 Ohms Rohs Compliant: Yes Series: BI-FET IIв„ў Slew Rate: 13 V/Вµs Temperature, Operating, Range: 0 to +70 В°C Voltage - Input Offset: 5000ВµV Voltage - Supply, Single/dual (В±): 10 V ~ 36 V, В±5 V ~ 18 V Voltage, Gain: 100 V/mV Voltage, Input: 10 to 36 V Voltage, Noise: 16 nV/sqrt Hz Voltage, Offset: 5 mV Voltage, Output, High: 13.5 V Voltage, Output, Low: -13.5 V Voltage, Supply: В±15 V Other Names: LF353MX, LF353MXTR
• LF353MX/NOPB
  TI (Texas Instruments) — National Semiconductor LF353MX/NOPB -3db Bandwidth: - Amplifier Type: J-FET Bandwidth: 4 MHz Channel Separation: -120 Common Mode Rejection Ratio: 100 Current - Input Bias: 50pA Current - Output / Channel: - Current - Supply: 3.6mA Current, Input Bias: 50 pA Current, Input Offset: 25 pA Current, Output: 20 mA Current, Supply: 3.6 mA Gain Bandwidth Product: 4MHz Harmonic Distortion: 0.02 % Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device Leaded Process Compatible: Yes Mounting Type: Surface Mount Number Of Amplifiers: Dual Number Of Circuits: 2 Operating Temperature: 0В°C ~ 70В°C Output Type: - Package / Case: 8-SOIC (3.9mm Width) Package Type: SOIC-8 Peak Reflow Compatible (260 C): Yes Resistance, Input: 10^12 Ohms Rohs Compliant: Yes Series: BI-FET IIв„ў Slew Rate: 13 V/Вµs Temperature, Operating, Range: 0 to +70 В°C Voltage - Input Offset: 5000ВµV Voltage - Supply, Single/dual (В±): 10 V ~ 36 V, В±5 V ~ 18 V Voltage, Gain: 100 V/mV Voltage, Input: 10 to 36 V Voltage, Noise: 16 nV/sqrt Hz Voltage, Offset: 5 mV Voltage, Output, High: 13.5 V Voltage, Output, Low: -13.5 V Voltage, Supply: В±15 V Other Names: LF353MX, LF353MXTR
• CTSPT30LF-353M
  Central Technologies —