Результаты поиска IXFN56N90P

Найдено 4 результатов.

• IXFN56N90P
  IXYS — IXYS IXFN56N90P RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 900 V Continuous Drain Current: 56 A Resistance Drain-Source RDS (on): 135 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-227B Fall Time: 38 ns Forward Transconductance gFS (Max / Min): 44 S Gate Charge Qg: 375 nC Minimum Operating Temperature: - 55 C Power Dissipation: 1000 W Rise Time: 80 ns Factory Pack Quantity: 10 Typical Turn-Off Delay Time: 93 ns
• IXFN56N90P
  IXYS — IXYS IXFN56N90P RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 900 V Continuous Drain Current: 56 A Resistance Drain-Source RDS (on): 135 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-227B Fall Time: 38 ns Forward Transconductance gFS (Max / Min): 44 S Gate Charge Qg: 375 nC Minimum Operating Temperature: - 55 C Power Dissipation: 1000 W Rise Time: 80 ns Factory Pack Quantity: 10 Typical Turn-Off Delay Time: 93 ns
• IXFN56N90P
  IXYS — IXYS IXFN56N90P RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 900 V Continuous Drain Current: 56 A Resistance Drain-Source RDS (on): 135 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-227B Fall Time: 38 ns Forward Transconductance gFS (Max / Min): 44 S Gate Charge Qg: 375 nC Minimum Operating Temperature: - 55 C Power Dissipation: 1000 W Rise Time: 80 ns Factory Pack Quantity: 10 Typical Turn-Off Delay Time: 93 ns
• IXFN56N90P_11
  IXYS —