Результаты поиска IXFN180N15P

Найдено 3 результатов.

• IXFN180N15P
  IXYS — IXYS IXFN180N15P Ciss, Typ, (pf): 7000 Configuration: Single Dual Source Continuous Drain Current: 150 A Current - Continuous Drain (id) @ 25?° C: 150A Drain To Source Voltage (vdss): 150V Drain-source Breakdown Voltage: 150 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 240nC @ 10V Gate-source Breakdown Voltage: +/- 20 V Id(cont), Tc=25?°c, (a): 150 Input Capacitance (ciss) @ Vds: 7000pF @ 25V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Chassis Mount Package / Case: SOT-227, miniBLOC Package Style: SOT-227B Pd, (w): 680 Power - Max: 680W Power Dissipation: 680 W Qg, Typ, (nc): 240 Rds On (max) @ Id, Vgs: 11 mOhm @ 90A, 10V Rds(on), Max, Tj=25?°c, (?„¦): 0.011 Resistance Drain-source Rds (on): 0.011 Ohms Rthjc, Max, (??c/w): 0.22 Series: PolarHT?„? Transistor Polarity: N-Channel Trr, Max, (ns): 200 Trr, Typ, (ns): - Vdss, Max, (v): 150 Vgs(th) (max) @ Id: 5V @ 4mA RoHS: yes Drain-Source Breakdown Voltage: 150 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.011 Ohms Fall Time: 36 ns Rise Time: 32 ns Factory Pack Quantity: 10 Typical Turn-Off Delay Time: 150 ns
• IXFN180N15P
  IXYS — IXYS IXFN180N15P Ciss, Typ, (pf): 7000 Configuration: Single Dual Source Continuous Drain Current: 150 A Current - Continuous Drain (id) @ 25?° C: 150A Drain To Source Voltage (vdss): 150V Drain-source Breakdown Voltage: 150 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 240nC @ 10V Gate-source Breakdown Voltage: +/- 20 V Id(cont), Tc=25?°c, (a): 150 Input Capacitance (ciss) @ Vds: 7000pF @ 25V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Chassis Mount Package / Case: SOT-227, miniBLOC Package Style: SOT-227B Pd, (w): 680 Power - Max: 680W Power Dissipation: 680 W Qg, Typ, (nc): 240 Rds On (max) @ Id, Vgs: 11 mOhm @ 90A, 10V Rds(on), Max, Tj=25?°c, (?„¦): 0.011 Resistance Drain-source Rds (on): 0.011 Ohms Rthjc, Max, (??c/w): 0.22 Series: PolarHT?„? Transistor Polarity: N-Channel Trr, Max, (ns): 200 Trr, Typ, (ns): - Vdss, Max, (v): 150 Vgs(th) (max) @ Id: 5V @ 4mA RoHS: yes Drain-Source Breakdown Voltage: 150 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.011 Ohms Fall Time: 36 ns Rise Time: 32 ns Factory Pack Quantity: 10 Typical Turn-Off Delay Time: 150 ns
• IXFN180N15P
  IXYS — IXYS IXFN180N15P Ciss, Typ, (pf): 7000 Configuration: Single Dual Source Continuous Drain Current: 150 A Current - Continuous Drain (id) @ 25?° C: 150A Drain To Source Voltage (vdss): 150V Drain-source Breakdown Voltage: 150 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 240nC @ 10V Gate-source Breakdown Voltage: +/- 20 V Id(cont), Tc=25?°c, (a): 150 Input Capacitance (ciss) @ Vds: 7000pF @ 25V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Chassis Mount Package / Case: SOT-227, miniBLOC Package Style: SOT-227B Pd, (w): 680 Power - Max: 680W Power Dissipation: 680 W Qg, Typ, (nc): 240 Rds On (max) @ Id, Vgs: 11 mOhm @ 90A, 10V Rds(on), Max, Tj=25?°c, (?„¦): 0.011 Resistance Drain-source Rds (on): 0.011 Ohms Rthjc, Max, (??c/w): 0.22 Series: PolarHT?„? Transistor Polarity: N-Channel Trr, Max, (ns): 200 Trr, Typ, (ns): - Vdss, Max, (v): 150 Vgs(th) (max) @ Id: 5V @ 4mA RoHS: yes Drain-Source Breakdown Voltage: 150 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.011 Ohms Fall Time: 36 ns Rise Time: 32 ns Factory Pack Quantity: 10 Typical Turn-Off Delay Time: 150 ns