Результаты поиска IRL530STRRPBF

Найдено 2 результатов.

• IRL530STRRPBF
  Vishay Intertechnology — Vishay Intertechnology IRL530STRRPBF Configuration: Single Continuous Drain Current: 15 A Continuous Drain Current Id: 15A Current - Continuous Drain (id) @ 25?° C: 15A Drain Source Voltage Vds: 100V Drain To Source Voltage (vdss): 100V Drain-source Breakdown Voltage: 100 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 28nC @ 5V Gate-source Breakdown Voltage: +/- 10 V ID_COMPONENTS: 2663515 Input Capacitance (ciss) @ Vds: 930pF @ 25V Leaded Process Compatible: Yes Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount On Resistance Rds(on): 160mohm Package / Case: D??Pak, TO-263 (2 leads + tab) Power - Max: 3.7W Power Dissipation: 3.7 W Rds On (max) @ Id, Vgs: 160 mOhm @ 9A, 5V Rds(on) Test Voltage Vgs: 5V Resistance Drain-source Rds (on): 0.16 Ohms Series: - Transistor Polarity: N Channel Vgs(th) (max) @ Id: 2V @ 250?µA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 100 V Gate-Source Breakdown Voltage: +/- 10 V Resistance Drain-Source RDS (on): 0.16 Ohms Fall Time: 48 ns Rise Time: 100 ns Factory Pack Quantity: 800 Typical Turn-Off Delay Time: 22 ns
• IRL530STRRPBF
  Vishay Intertechnology — Vishay Intertechnology IRL530STRRPBF Configuration: Single Continuous Drain Current: 15 A Continuous Drain Current Id: 15A Current - Continuous Drain (id) @ 25?° C: 15A Drain Source Voltage Vds: 100V Drain To Source Voltage (vdss): 100V Drain-source Breakdown Voltage: 100 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 28nC @ 5V Gate-source Breakdown Voltage: +/- 10 V ID_COMPONENTS: 2663515 Input Capacitance (ciss) @ Vds: 930pF @ 25V Leaded Process Compatible: Yes Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount On Resistance Rds(on): 160mohm Package / Case: D??Pak, TO-263 (2 leads + tab) Power - Max: 3.7W Power Dissipation: 3.7 W Rds On (max) @ Id, Vgs: 160 mOhm @ 9A, 5V Rds(on) Test Voltage Vgs: 5V Resistance Drain-source Rds (on): 0.16 Ohms Series: - Transistor Polarity: N Channel Vgs(th) (max) @ Id: 2V @ 250?µA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 100 V Gate-Source Breakdown Voltage: +/- 10 V Resistance Drain-Source RDS (on): 0.16 Ohms Fall Time: 48 ns Rise Time: 100 ns Factory Pack Quantity: 800 Typical Turn-Off Delay Time: 22 ns