Результаты поиска IRFR9020TRPBF
Найдено 4 результатов.
- Vishay Intertechnology — Vishay Intertechnology IRFR9020TRPBF Configuration: Single Continuous Drain Current: 9.9 A Continuous Drain Current Id: -9.9A Current - Continuous Drain (id) @ 25?° C: 9.9A Drain Source Voltage Vds: -50V Drain To Source Voltage (vdss): 50V Drain-source Breakdown Voltage: 50 V Fet Feature: Standard Fet Type: MOSFET P-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 14nC @ 10V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 2663457 Input Capacitance (ciss) @ Vds: 490pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Leaded Process Compatible: Yes Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount On Resistance Rds(on): 280mohm Package / Case: DPak, TO-252 (2 leads+tab), SC-63 Power - Max: 42W Power Dissipation: 42000 mW Rds On (max) @ Id, Vgs: 280 mOhm @ 5.7A, 10V Rds(on) Test Voltage Vgs: -10V Resistance Drain-source Rds (on): 0.28 Ohm @ 10 V Series: - Transistor Polarity: P-Channel Vgs(th) (max) @ Id: 4V @ 250?µA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: - 50 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.28 Ohms Fall Time: 25 ns Rise Time: 67 ns Factory Pack Quantity: 2000 Typical Turn-Off Delay Time: 12 ns Other Names: IRFR9020PBFTR
- Vishay Intertechnology — Vishay Intertechnology IRFR9020TRPBF Configuration: Single Continuous Drain Current: 9.9 A Continuous Drain Current Id: -9.9A Current - Continuous Drain (id) @ 25?° C: 9.9A Drain Source Voltage Vds: -50V Drain To Source Voltage (vdss): 50V Drain-source Breakdown Voltage: 50 V Fet Feature: Standard Fet Type: MOSFET P-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 14nC @ 10V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 2663457 Input Capacitance (ciss) @ Vds: 490pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Leaded Process Compatible: Yes Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount On Resistance Rds(on): 280mohm Package / Case: DPak, TO-252 (2 leads+tab), SC-63 Power - Max: 42W Power Dissipation: 42000 mW Rds On (max) @ Id, Vgs: 280 mOhm @ 5.7A, 10V Rds(on) Test Voltage Vgs: -10V Resistance Drain-source Rds (on): 0.28 Ohm @ 10 V Series: - Transistor Polarity: P-Channel Vgs(th) (max) @ Id: 4V @ 250?µA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: - 50 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.28 Ohms Fall Time: 25 ns Rise Time: 67 ns Factory Pack Quantity: 2000 Typical Turn-Off Delay Time: 12 ns Other Names: IRFR9020PBFTR
- Vishay Intertechnology — Vishay Intertechnology IRFR9020TRPBF Configuration: Single Continuous Drain Current: 9.9 A Continuous Drain Current Id: -9.9A Current - Continuous Drain (id) @ 25?° C: 9.9A Drain Source Voltage Vds: -50V Drain To Source Voltage (vdss): 50V Drain-source Breakdown Voltage: 50 V Fet Feature: Standard Fet Type: MOSFET P-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 14nC @ 10V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 2663457 Input Capacitance (ciss) @ Vds: 490pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Leaded Process Compatible: Yes Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount On Resistance Rds(on): 280mohm Package / Case: DPak, TO-252 (2 leads+tab), SC-63 Power - Max: 42W Power Dissipation: 42000 mW Rds On (max) @ Id, Vgs: 280 mOhm @ 5.7A, 10V Rds(on) Test Voltage Vgs: -10V Resistance Drain-source Rds (on): 0.28 Ohm @ 10 V Series: - Transistor Polarity: P-Channel Vgs(th) (max) @ Id: 4V @ 250?µA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: - 50 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.28 Ohms Fall Time: 25 ns Rise Time: 67 ns Factory Pack Quantity: 2000 Typical Turn-Off Delay Time: 12 ns Other Names: IRFR9020PBFTR
- KERSEMI [Kersemi Electronic Co., Ltd.] — Power MOSFET
