Результаты поиска IRFR9010PBF

Найдено 2 результатов.

• IRFR9010PBF
  Vishay Intertechnology — Vishay Intertechnology IRFR9010PBF Configuration: Single Continuous Drain Current: 5.3 A Continuous Drain Current Id: -5.3A Current - Continuous Drain (id) @ 25В° C: 5.3A Drain Source Voltage Vds: -50V Drain To Source Voltage (vdss): 50V Drain-source Breakdown Voltage: 50 V Fet Feature: Standard Fet Type: MOSFET P-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 1.7 S Gate Charge (qg) @ Vgs: 9.1nC @ 10V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 2663452 Input Capacitance (ciss) @ Vds: 240pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Leaded Process Compatible: Yes Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount On Resistance Rds(on): 500mohm Package / Case: DPak, TO-252 (2 leads+tab), SC-63 Power - Max: 25W Power Dissipation: 25000 mW Rds On (max) @ Id, Vgs: 500 mOhm @ 2.8A, 10V Rds(on) Test Voltage Vgs: -10V Resistance Drain-source Rds (on): 0.5 Ohm @ 10 V Series: - Transistor Polarity: P-Channel Vgs(th) (max) @ Id: 4V @ 250ВµA
• IRFR9010PBF
  Vishay Intertechnology — Vishay Intertechnology IRFR9010PBF Configuration: Single Continuous Drain Current: 5.3 A Continuous Drain Current Id: -5.3A Current - Continuous Drain (id) @ 25В° C: 5.3A Drain Source Voltage Vds: -50V Drain To Source Voltage (vdss): 50V Drain-source Breakdown Voltage: 50 V Fet Feature: Standard Fet Type: MOSFET P-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 1.7 S Gate Charge (qg) @ Vgs: 9.1nC @ 10V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 2663452 Input Capacitance (ciss) @ Vds: 240pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Leaded Process Compatible: Yes Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount On Resistance Rds(on): 500mohm Package / Case: DPak, TO-252 (2 leads+tab), SC-63 Power - Max: 25W Power Dissipation: 25000 mW Rds On (max) @ Id, Vgs: 500 mOhm @ 2.8A, 10V Rds(on) Test Voltage Vgs: -10V Resistance Drain-source Rds (on): 0.5 Ohm @ 10 V Series: - Transistor Polarity: P-Channel Vgs(th) (max) @ Id: 4V @ 250ВµA