Результаты поиска IRFR010PBF

Найдено 3 результатов.

• IRFR010PBF
  KERSEMI — Vishay Intertechnology IRFR010PBF Continuous Drain Current Id: 8.2A Current - Continuous Drain (id) @ 25?° C: 8.2A Drain Source Voltage Vds: 50V Drain To Source Voltage (vdss): 50V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 10nC @ 10V ID_COMPONENTS: 2663400 Input Capacitance (ciss) @ Vds: 250pF @ 25V Leaded Process Compatible: Yes Mounting Type: Surface Mount On Resistance Rds(on): 200mohm Package / Case: DPak, TO-252 (2 leads+tab), SC-63 Power - Max: 25W Rds On (max) @ Id, Vgs: 200 mOhm @ 4.2A, 10V Rds(on) Test Voltage Vgs: 10V Series: HEXFET?® Transistor Polarity: N Channel Vgs(th) (max) @ Id: 4V @ 250?µA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 8 A Resistance Drain-Source RDS (on): 0.2 Ohms Configuration: Single Maximum Operating Temperature: + 175 C Mounting Style: SMD/SMT Fall Time: 19 ns Minimum Operating Temperature: - 55 C Power Dissipation: 27 W Rise Time: 50 ns Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 13 ns Other Names: *IRFR010PBF
• IRFR010PBF
  Vishay Intertechnology — Vishay Intertechnology IRFR010PBF Continuous Drain Current Id: 8.2A Current - Continuous Drain (id) @ 25?° C: 8.2A Drain Source Voltage Vds: 50V Drain To Source Voltage (vdss): 50V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 10nC @ 10V ID_COMPONENTS: 2663400 Input Capacitance (ciss) @ Vds: 250pF @ 25V Leaded Process Compatible: Yes Mounting Type: Surface Mount On Resistance Rds(on): 200mohm Package / Case: DPak, TO-252 (2 leads+tab), SC-63 Power - Max: 25W Rds On (max) @ Id, Vgs: 200 mOhm @ 4.2A, 10V Rds(on) Test Voltage Vgs: 10V Series: HEXFET?® Transistor Polarity: N Channel Vgs(th) (max) @ Id: 4V @ 250?µA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 8 A Resistance Drain-Source RDS (on): 0.2 Ohms Configuration: Single Maximum Operating Temperature: + 175 C Mounting Style: SMD/SMT Fall Time: 19 ns Minimum Operating Temperature: - 55 C Power Dissipation: 27 W Rise Time: 50 ns Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 13 ns Other Names: *IRFR010PBF
• IRFR010PBF
  Vishay Intertechnology — Vishay Intertechnology IRFR010PBF Continuous Drain Current Id: 8.2A Current - Continuous Drain (id) @ 25?° C: 8.2A Drain Source Voltage Vds: 50V Drain To Source Voltage (vdss): 50V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 10nC @ 10V ID_COMPONENTS: 2663400 Input Capacitance (ciss) @ Vds: 250pF @ 25V Leaded Process Compatible: Yes Mounting Type: Surface Mount On Resistance Rds(on): 200mohm Package / Case: DPak, TO-252 (2 leads+tab), SC-63 Power - Max: 25W Rds On (max) @ Id, Vgs: 200 mOhm @ 4.2A, 10V Rds(on) Test Voltage Vgs: 10V Series: HEXFET?® Transistor Polarity: N Channel Vgs(th) (max) @ Id: 4V @ 250?µA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 8 A Resistance Drain-Source RDS (on): 0.2 Ohms Configuration: Single Maximum Operating Temperature: + 175 C Mounting Style: SMD/SMT Fall Time: 19 ns Minimum Operating Temperature: - 55 C Power Dissipation: 27 W Rise Time: 50 ns Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 13 ns Other Names: *IRFR010PBF