Результаты поиска IRFD9020PBF

Найдено 4 результатов.

• 1748250000
  Weidmuller — CONN LOCK 3.5MM 22POS SN BK
• IRFD9020PBF
  Vishay Intertechnology — Vishay Semiconductors IRFD9020PBF Product Category: MOSFET RoHS: yes Transistor Polarity: P-Channel Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: 20 V Continuous Drain Current: 1.6 A Resistance Drain-Source RDS (on): 0.28 Ohm at 10 V Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: HexPDIP Fall Time: 29 ns Forward Transconductance gFS (Max / Min): 1.3 S Gate Charge Qg: 19 nC Minimum Operating Temperature: - 55 C Power Dissipation: 1300 mW Rise Time: 68 ns Factory Pack Quantity: 2500 Typical Turn-Off Delay Time: 15 ns
• IRFD9020PBF
  Vishay Intertechnology — Vishay Semiconductors IRFD9020PBF Product Category: MOSFET RoHS: yes Transistor Polarity: P-Channel Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: 20 V Continuous Drain Current: 1.6 A Resistance Drain-Source RDS (on): 0.28 Ohm at 10 V Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: HexPDIP Fall Time: 29 ns Forward Transconductance gFS (Max / Min): 1.3 S Gate Charge Qg: 19 nC Minimum Operating Temperature: - 55 C Power Dissipation: 1300 mW Rise Time: 68 ns Factory Pack Quantity: 2500 Typical Turn-Off Delay Time: 15 ns
• IRFD9020PBF
  Vishay Semiconductors — Vishay Semiconductors IRFD9020PBF Product Category: MOSFET RoHS: yes Transistor Polarity: P-Channel Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: 20 V Continuous Drain Current: 1.6 A Resistance Drain-Source RDS (on): 0.28 Ohm at 10 V Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: HexPDIP Fall Time: 29 ns Forward Transconductance gFS (Max / Min): 1.3 S Gate Charge Qg: 19 nC Minimum Operating Temperature: - 55 C Power Dissipation: 1300 mW Rise Time: 68 ns Factory Pack Quantity: 2500 Typical Turn-Off Delay Time: 15 ns