Результаты поиска IRF9Z10PBF

Найдено 2 результатов.

• IRF9Z10PBF
  Siliconix — Vishay Intertechnology IRF9Z10PBF Configuration: Single Continuous Drain Current: 6.7 A Continuous Drain Current Id: -6.7A Current - Continuous Drain (id) @ 25?° C: 6.7A Drain Source Voltage Vds: -60V Drain To Source Voltage (vdss): 60V Drain-source Breakdown Voltage: 60 V Fet Feature: Standard Fet Type: MOSFET P-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 12nC @ 10V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 2661770 Input Capacitance (ciss) @ Vds: 270pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Mounting Type: Through Hole No. Of Pins: 3 On Resistance Rds(on): 500mohm Package / Case: TO-220-3 (Straight Leads) Power - Max: 43W Power Dissipation: 43000 mW Rds On (max) @ Id, Vgs: 500 mOhm @ 4A, 10V Rds(on) Test Voltage Vgs: -10V Resistance Drain-source Rds (on): 0.5 Ohm @ 10 V Series: - Transistor Polarity: P-Channel Vgs(th) (max) @ Id: 4V @ 250?µA Other Names: *IRF9Z10PBF
• IRF9Z10PBF
  Vishay Intertechnology — Vishay Intertechnology IRF9Z10PBF Configuration: Single Continuous Drain Current: 6.7 A Continuous Drain Current Id: -6.7A Current - Continuous Drain (id) @ 25?° C: 6.7A Drain Source Voltage Vds: -60V Drain To Source Voltage (vdss): 60V Drain-source Breakdown Voltage: 60 V Fet Feature: Standard Fet Type: MOSFET P-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 12nC @ 10V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 2661770 Input Capacitance (ciss) @ Vds: 270pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Mounting Type: Through Hole No. Of Pins: 3 On Resistance Rds(on): 500mohm Package / Case: TO-220-3 (Straight Leads) Power - Max: 43W Power Dissipation: 43000 mW Rds On (max) @ Id, Vgs: 500 mOhm @ 4A, 10V Rds(on) Test Voltage Vgs: -10V Resistance Drain-source Rds (on): 0.5 Ohm @ 10 V Series: - Transistor Polarity: P-Channel Vgs(th) (max) @ Id: 4V @ 250?µA Other Names: *IRF9Z10PBF