Результаты поиска IRF830ASPBF

Найдено 2 результатов.

• IRF830ASPBF
  Vishay Intertechnology — Vishay Intertechnology IRF830ASPBF Configuration: Single Continuous Drain Current: 5 A Continuous Drain Current Id: 5A Current - Continuous Drain (id) @ 25?° C: 5A Drain Source Voltage Vds: 500V Drain To Source Voltage (vdss): 500V Drain-source Breakdown Voltage: 500 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 24nC @ 10V Gate-source Breakdown Voltage: +/- 30 V ID_COMPONENTS: 2661747 Input Capacitance (ciss) @ Vds: 620pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Leaded Process Compatible: Yes Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount On Resistance Rds(on): 1.4ohm Package / Case: D??Pak, TO-263 (2 leads + tab) Power - Max: 3.1W Power Dissipation: 3100 mW Rds On (max) @ Id, Vgs: 1.4 Ohm @ 3A, 10V Rds(on) Test Voltage Vgs: 10V Resistance Drain-source Rds (on): 1.4 Ohm @ 10 V Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4.5V @ 250?µA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 500 V Gate-Source Breakdown Voltage: +/- 30 V Resistance Drain-Source RDS (on): 1.4 Ohms Fall Time: 15 ns Rise Time: 21 ns Factory Pack Quantity: 1000 Typical Turn-Off Delay Time: 21 ns Other Names: *IRF830ASPBF
• IRF830ASPBF
  Vishay Intertechnology — Vishay Intertechnology IRF830ASPBF Configuration: Single Continuous Drain Current: 5 A Continuous Drain Current Id: 5A Current - Continuous Drain (id) @ 25?° C: 5A Drain Source Voltage Vds: 500V Drain To Source Voltage (vdss): 500V Drain-source Breakdown Voltage: 500 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 24nC @ 10V Gate-source Breakdown Voltage: +/- 30 V ID_COMPONENTS: 2661747 Input Capacitance (ciss) @ Vds: 620pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Leaded Process Compatible: Yes Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount On Resistance Rds(on): 1.4ohm Package / Case: D??Pak, TO-263 (2 leads + tab) Power - Max: 3.1W Power Dissipation: 3100 mW Rds On (max) @ Id, Vgs: 1.4 Ohm @ 3A, 10V Rds(on) Test Voltage Vgs: 10V Resistance Drain-source Rds (on): 1.4 Ohm @ 10 V Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4.5V @ 250?µA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 500 V Gate-Source Breakdown Voltage: +/- 30 V Resistance Drain-Source RDS (on): 1.4 Ohms Fall Time: 15 ns Rise Time: 21 ns Factory Pack Quantity: 1000 Typical Turn-Off Delay Time: 21 ns Other Names: *IRF830ASPBF