Результаты поиска GQM1875C2E9R1CB12D

Найдено 9 результатов.

• APTM100A23ST
  Microsemi Corporation — Microsemi Corporation APTM100A23ST Mfr Package Description: MODULE-10 Package Shape: RECTANGULAR Package Style: FLANGE MOUNT Terminal Form: UNSPECIFIED Terminal Finish: TIN LEAD Terminal Position: UPPER Number of Terminals: 10 Package Body Material: UNSPECIFIED Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR Case Connection: ISOLATED Number of Elements: 2 Transistor Application: SWITCHING Transistor Element Material: SILICON Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE POWER Drain Current-Max (ID): 36 A DS Breakdown Voltage-Min: 1000 V Avalanche Energy Rating (Eas): 2500 mJ Drain-source On Resistance-Max: 0.2300 ohm Pulsed Drain Current-Max (IDM): 144 A
• APTM100A23STG
  Microsemi Corporation — Microsemi Corporation APTM100A23STG Current - Continuous Drain (id) @ 25?° C: 36A Drain To Source Voltage (vdss): 1000V (1kV) Fet Feature: Standard Fet Type: 2 N-Channel (Half Bridge) Gate Charge (qg) @ Vgs: 308nC @ 10V Input Capacitance (ciss) @ Vds: 8700pF @ 25V Mounting Type: Chassis Mount Package / Case: SP4 Power - Max: 694W Rds On (max) @ Id, Vgs: 270 mOhm @ 18A, 10V Series: - Vgs(th) (max) @ Id: 5V @ 5mA
• APTM100A23SCT
  Microsemi Corporation — Microsemi Corporation APTM100A23SCT Package Shape: RECTANGULAR Package Style: FLANGE MOUNT Terminal Form: UNSPECIFIED Terminal Position: UPPER Number of Terminals: 10 Package Body Material: UNSPECIFIED Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR Case Connection: ISOLATED Number of Elements: 2 Transistor Application: SWITCHING Transistor Element Material: SILICON Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE POWER Drain Current-Max (ID): 36 A DS Breakdown Voltage-Min: 1000 V Avalanche Energy Rating (Eas): 2500 mJ Drain-source On Resistance-Max: 0.2300 ohm Pulsed Drain Current-Max (IDM): 144 A
• APTM100A23SCTG
  Microsemi Corporation — Microsemi Corporation APTM100A23SCTG Current - Continuous Drain (id) @ 25?° C: 36A Drain To Source Voltage (vdss): 1000V (1kV) Fet Feature: Standard Fet Type: 2 N-Channel (Half Bridge) Gate Charge (qg) @ Vgs: 308nC @ 10V Input Capacitance (ciss) @ Vds: 8700pF @ 25V Mounting Type: Chassis Mount Package / Case: SP4 Power - Max: 694W Rds On (max) @ Id, Vgs: 270 mOhm @ 18A, 10V Series: - Vgs(th) (max) @ Id: 5V @ 5mA
• 381LX102M100A202
  Cornell Dubilier — Snap-In Electrolytic Capacitors 1000uF 100V 20%
• 380LX152M100A202
  Cornell Dubilier — Snap-In Electrolytic Capacitors 1500uF 100V 20%
• 380LX152M100A202
  Cornell Dubilier Electronics (CDE) — CAP 1500UF 100V ELECT SNAP IN
• 381LX102M100A202
  Cornell Dubilier Electronics (CDE) — CAP 1000UF 100V ELECT SNAP IN
• GQM1875C2E9R1CB12D
  Murata Electronics — Murata Electronics GQM1875C2E9R1CB12D Product Category: Multilayer Ceramic Capacitors MLCC - SMD/SMT RoHS: yes Capacitance: 9.1 pF Voltage Rating: 250 V Tolerance: 0.25 pF Temperature Coefficient / Code: C0G (NP0) Case Code - in: 0603 Case Code - mm: 1608 Operating Temperature Range: - 55 C to + 125 C Product: High Q MLCCs Brand: Murata Electronics Case Height: 0.7 mm Case Length: 1.6 mm Case Width: 0.8 mm Package / Case: 0603 (1608 metric) Series: GQM Factory Pack Quantity: 4000 Termination Style: SMD/SMT Type: High Frequency High Q Type