Результаты поиска FDS4435BZ

Найдено 7 результатов.

• FDS4435BZ
  Fairchild Semiconductor — MOSFETs 30V.PCH POWER TRENCH MOSFET
• FDS4435BZ
  Fairchild Semiconductor — MOSFET P-CH 30V 8.8A 8-SOIC
• FDS4435BZ
  Fairchild Semiconductor — MOSFET P-CH 30V 8.8A 8-SOIC
• FDS4435BZ
  Fairchild Semiconductor — MOSFET P-CH 30V 8.8A 8-SOIC
• FDS4435BZ_07
  Fairchild Semiconductor —
• FDS4435BZ_F085
  Fairchild Semiconductor — Fairchild Semiconductor FDS4435BZ_F085 Configuration: Single Continuous Drain Current: - 8.8 A Current - Continuous Drain (id) @ 25?° C: 8.8A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: - 30 V Fet Feature: Logic Level Gate Fet Type: MOSFET P-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 24 S Gate Charge (qg) @ Vgs: 40nC @ 10V Gate-source Breakdown Voltage: +/- 25 V Input Capacitance (ciss) @ Vds: 1845pF @ 15V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Power - Max: 1W Power Dissipation: 2.5 W Rds On (max) @ Id, Vgs: 20 mOhm @ 8.8A, 10V Resistance Drain-source Rds (on): 26 mOhms Series: PowerTrench?® Transistor Polarity: P-Channel Vgs(th) (max) @ Id: 3V @ 250?µA
• FDS4435BZ_F021
  Fairchild Semiconductor — Fairchild Semiconductor FDS4435BZ_F021 Channel Type: P-Channel Drain-to-Source Voltage [Vdss]: 30 V Drain-Source On Resistance-Max: 20 m?© Qg Gate Charge: 16 nC Rated Power Dissipation: 2.5 W