Результаты поиска FDPF7N60NZ

Найдено 3 результатов.

• FDPF7N60NZ
  Fairchild Semiconductor — Fairchild Semiconductor FDPF7N60NZ Current - Continuous Drain (id) @ 25?° C: 6.5A Drain To Source Voltage (vdss): 600V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 17nC @ 10V Input Capacitance (ciss) @ Vds: 730pF @ 25V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Power - Max: 33W Power Dissipation: 33 W Rds On (max) @ Id, Vgs: 1.25 Ohm @ 3.25A, 10V Series: UniFET-II?„? Transistor Polarity: PNP, N-Channel Vgs(th) (max) @ Id: 5V @ 250?µA RoHS: yes Drain-Source Breakdown Voltage: 600 V Continuous Drain Current: 6.5 A Resistance Drain-Source RDS (on): 1.25 Ohms Configuration: Single Fall Time: 60 ns Forward Transconductance gFS (Max / Min): 7.3 S Gate Charge Qg: 17 nC Rise Time: 70 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 40 ns
• FDPF7N60NZ
  Fairchild Semiconductor — Fairchild Semiconductor FDPF7N60NZ Current - Continuous Drain (id) @ 25?° C: 6.5A Drain To Source Voltage (vdss): 600V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 17nC @ 10V Input Capacitance (ciss) @ Vds: 730pF @ 25V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Power - Max: 33W Power Dissipation: 33 W Rds On (max) @ Id, Vgs: 1.25 Ohm @ 3.25A, 10V Series: UniFET-II?„? Transistor Polarity: PNP, N-Channel Vgs(th) (max) @ Id: 5V @ 250?µA RoHS: yes Drain-Source Breakdown Voltage: 600 V Continuous Drain Current: 6.5 A Resistance Drain-Source RDS (on): 1.25 Ohms Configuration: Single Fall Time: 60 ns Forward Transconductance gFS (Max / Min): 7.3 S Gate Charge Qg: 17 nC Rise Time: 70 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 40 ns
• FDPF7N60NZT
  Fairchild Semiconductor — MOSFET N-CH 600V 6.5A TO-220F