Результаты поиска FDPF10N60NZ

Найдено 2 результатов.

• FDPF10N60NZ
  Fairchild Semiconductor — Fairchild Semiconductor FDPF10N60NZ Current - Continuous Drain (id) @ 25?° C: 10A Drain To Source Voltage (vdss): 600V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 30nC @ 10V Input Capacitance (ciss) @ Vds: 1475pF @ 25V Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Power - Max: 38W Rds On (max) @ Id, Vgs: 750 mOhm @ 5A, 10V Series: UniFET-II?„? Vgs(th) (max) @ Id: 5V @ 250?µA RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 600 V Gate-Source Breakdown Voltage: 25 V Continuous Drain Current: 10 A Resistance Drain-Source RDS (on): 0.64 Ohms Mounting Style: Through Hole Fall Time: 50 nS Forward Transconductance gFS (Max / Min): 14 S Gate Charge Qg: 23 nC Power Dissipation: 38 W Rise Time: 50 ns Factory Pack Quantity: 50
• FDPF10N60NZ
  Fairchild Semiconductor — Fairchild Semiconductor FDPF10N60NZ Current - Continuous Drain (id) @ 25?° C: 10A Drain To Source Voltage (vdss): 600V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 30nC @ 10V Input Capacitance (ciss) @ Vds: 1475pF @ 25V Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Power - Max: 38W Rds On (max) @ Id, Vgs: 750 mOhm @ 5A, 10V Series: UniFET-II?„? Vgs(th) (max) @ Id: 5V @ 250?µA RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 600 V Gate-Source Breakdown Voltage: 25 V Continuous Drain Current: 10 A Resistance Drain-Source RDS (on): 0.64 Ohms Mounting Style: Through Hole Fall Time: 50 nS Forward Transconductance gFS (Max / Min): 14 S Gate Charge Qg: 23 nC Power Dissipation: 38 W Rise Time: 50 ns Factory Pack Quantity: 50