Результаты поиска FDP8N50NZ

Найдено 3 результатов.

• FDP8N50NZ
  Fairchild Semiconductor — Fairchild Semiconductor FDP8N50NZ Current - Continuous Drain (id) @ 25В° C: 8A Drain To Source Voltage (vdss): 500V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 18nC @ 10V Input Capacitance (ciss) @ Vds: 735pF @ 25V Mounting Type: Through Hole Package / Case: TO-220-3 Formed Leads Power - Max: 139W Rds On (max) @ Id, Vgs: 850 mOhm @ 4A, 10V Series: UniFETв„ў Vgs(th) (max) @ Id: 5V @ 250ВµA RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 500 V Continuous Drain Current: 8 A Resistance Drain-Source RDS (on): 0.77 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Fall Time: 60 ns Forward Transconductance gFS (Max / Min): 6.3 S Gate Charge Qg: 18 nC Minimum Operating Temperature: - 55 C Power Dissipation: 139 W Rise Time: 80 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 95 ns
• FDP8N50NZ
  Fairchild Semiconductor — Fairchild Semiconductor FDP8N50NZ Current - Continuous Drain (id) @ 25В° C: 8A Drain To Source Voltage (vdss): 500V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 18nC @ 10V Input Capacitance (ciss) @ Vds: 735pF @ 25V Mounting Type: Through Hole Package / Case: TO-220-3 Formed Leads Power - Max: 139W Rds On (max) @ Id, Vgs: 850 mOhm @ 4A, 10V Series: UniFETв„ў Vgs(th) (max) @ Id: 5V @ 250ВµA RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 500 V Continuous Drain Current: 8 A Resistance Drain-Source RDS (on): 0.77 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Fall Time: 60 ns Forward Transconductance gFS (Max / Min): 6.3 S Gate Charge Qg: 18 nC Minimum Operating Temperature: - 55 C Power Dissipation: 139 W Rise Time: 80 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 95 ns
• FDP8N50NZF
  FAIRCHILD [Fairchild Semiconductor] — N-Channel MOSFET 500V, 7A, 1ГЋВ©