Результаты поиска FDD6030L

Найдено 5 результатов.

• FDD6030L
  Fairchild Semiconductor — MOSFETs 30V N&P-Channel Power Trench
• FDD6030L
  Fairchild Semiconductor — MOSFET N-CH 30V 12A DPAK
• FDD6030L_Q
  Fairchild Semiconductor — Fairchild Semiconductor FDD6030L_Q Configuration: Single Continuous Drain Current: 50 A Drain-source Breakdown Voltage: 30 V Fall Time: 12 ns Forward Transconductance Gfs (max / Min): 47 S Gate-source Breakdown Voltage: +/- 20 V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: TO-252AA Power Dissipation: 3.2 W Resistance Drain-source Rds (on): 0.0145 Ohms Rise Time: 7 ns Transistor Polarity: N-Channel Typical Turn-off Delay Time: 29 ns Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.0145 Ohms Forward Transconductance gFS (Max / Min): 47 S Typical Turn-Off Delay Time: 29 ns
• FDD6030L_NL
  Fairchild Semiconductor — 30V N-Channel Logic PowerTrench MOSFET
• FDD6030L_03
  Fairchild Semiconductor —