Результаты поиска FDB3632

Найдено 7 результатов.

• FDB3632
  Fairchild Semiconductor — MOSFETs N-Channel PowerTrench
• FDB3632
  Fairchild Semiconductor — MOSFET N-CH 100V 80A D2PAK
• FDB3632
  Fairchild Semiconductor — MOSFET N-CH 100V 80A D2PAK
• FDB3632
  Fairchild Semiconductor — MOSFET N-CH 100V 80A D2PAK
• FDB3632_NL
  Fairchild Semiconductor — MOSFETs N-CH PowerTrench
• FDB3632_12
  Fairchild Semiconductor —
• FDB3632_F085
  Fairchild Semiconductor — Fairchild Semiconductor FDB3632_F085 Configuration: Single Continuous Drain Current: 80 A Drain-source Breakdown Voltage: 100 V Fall Time: 46 ns Gate Charge Qg: 84 nC Gate-source Breakdown Voltage: 20 V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: TO-263AB-3 Power Dissipation: 310 W Resistance Drain-source Rds (on): 7.5 mOhms Rise Time: 39 ns Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 96 ns RoHS: yes Drain-Source Breakdown Voltage: 100 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 7.5 mOhms Typical Turn-Off Delay Time: 96 ns