Результаты поиска CR04AM-12
Найдено 11 результатов.
- Mitsubishi Electric Corporation — Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
- Renesas Electronics —
- RENESAS [Renesas Technology Corp] — Thyristor Low Power Use
- Renesas Electronics —
- Renesas Electronics — Renesas Electronics CR04AM-12-AB Mfr Package Description: SC-43A, 3 PIN Package Shape: ROUND Package Style: CYLINDRICAL Terminal Form: WIRE Terminal Position: BOTTOM Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Number of Elements: 1 DC Gate Trigger Current-Max: 0.0500 mA RMS On-state Current-Max: 0.6300 A Repetitive Peak Off-state Voltage: 600 V Repetitive Peak Reverse Voltage: 600 V Trigger Device Type: SCR
- RENESAS [Renesas Technology Corp] — Thyristor Low Power Use
- Renesas Electronics — Renesas Electronics CR04AM-12#F00 Current - Gate Trigger (igt) (max): 100ВµA Current - Hold (ih) (max): 3mA Current - Non Rep. Surge 50, 60hz (itsm): 10A @ 60Hz Current - Off State (max): 500ВµA Current - On State (it (av)) (max): 400mA Current - On State (it (rms) (max): 630mA Current - On State (it (rms)) (max): 630mA Mounting Type: Through Hole Operating Temperature: -40В°C ~ 125В°C Package / Case: TO-92 Scr Type: Sensitive Gate Voltage - Gate Trigger (vgt) (max): 800mV Voltage - Off State: 600V Voltage - On State (vtm) (max): 1.2V
- RENESAS [Renesas Technology Corp] — Thyristor Low Power Use
- RENESAS [Renesas Technology Corp] — Thyristor Low Power Use
- RENESAS [Renesas Technology Corp] — Thyristor Low Power Use
