Результаты поиска CI201210-10NJ

Найдено 4 результатов.

• CI201210-10NJ
  Bourns — Bourns CI201210-10NJ Applications: Mobile Communications Current: 300mA Current - Saturation: - Current - Temperature Rise: - Dc Resistance (dcr): 300 mOhm Max Dimensions: 2 mm L x 0.500 mm H Frequency - Test: 100MHz ID_COMPONENTS: 4616143 Inductance: 10nH Material - Core: Ceramic Maximum Dc Current: 300 mAmps Maximum Dc Resistance: 0.3 Ohms Mounting Type: Surface Mount Operating Temperature: -55В°C ~ 125В°C Package / Case: 0805 (2012 Metric) Q @ Freq: 10 @ 100MHz Q Minimum: 10 Self Resonant Freq: 2.5GHz Self Resonant Frequency: 1800 MHz Series: CI201210 Shielding: - Termination Style: SMD/SMT Tolerance: В±5% Type: Ceramic
• CI201210-10NJ
  Bourns — Bourns CI201210-10NJ Applications: Mobile Communications Current: 300mA Current - Saturation: - Current - Temperature Rise: - Dc Resistance (dcr): 300 mOhm Max Dimensions: 2 mm L x 0.500 mm H Frequency - Test: 100MHz ID_COMPONENTS: 4616143 Inductance: 10nH Material - Core: Ceramic Maximum Dc Current: 300 mAmps Maximum Dc Resistance: 0.3 Ohms Mounting Type: Surface Mount Operating Temperature: -55В°C ~ 125В°C Package / Case: 0805 (2012 Metric) Q @ Freq: 10 @ 100MHz Q Minimum: 10 Self Resonant Freq: 2.5GHz Self Resonant Frequency: 1800 MHz Series: CI201210 Shielding: - Termination Style: SMD/SMT Tolerance: В±5% Type: Ceramic
• CI201210-10NJ
  Bourns — Bourns CI201210-10NJ Applications: Mobile Communications Current: 300mA Current - Saturation: - Current - Temperature Rise: - Dc Resistance (dcr): 300 mOhm Max Dimensions: 2 mm L x 0.500 mm H Frequency - Test: 100MHz ID_COMPONENTS: 4616143 Inductance: 10nH Material - Core: Ceramic Maximum Dc Current: 300 mAmps Maximum Dc Resistance: 0.3 Ohms Mounting Type: Surface Mount Operating Temperature: -55В°C ~ 125В°C Package / Case: 0805 (2012 Metric) Q @ Freq: 10 @ 100MHz Q Minimum: 10 Self Resonant Freq: 2.5GHz Self Resonant Frequency: 1800 MHz Series: CI201210 Shielding: - Termination Style: SMD/SMT Tolerance: В±5% Type: Ceramic
• BZX84J-B11,115
  NXP Semiconductors — NXP Semiconductors BZX84J-B11,115 Current - Reverse Leakage @ Vr: 100nA @ 8V ID_COMPONENTS: 1946757 Impedance (max) (zzt): 10 Ohm Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Maximum Reverse Leakage Current: 0.1 uA Maximum Zener Impedance: 10 Ohms Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Operating Temperature: -65В°C ~ 150В°C Package / Case: SC-90, SOD-323F Power - Max: 550mW Power Dissipation: 550 mW Series: - Tolerance: В±2% Voltage - Forward (vf) (max) @ If: 900mV @ 10mA Voltage - Zener (nom) (vz): 11V Voltage Temperature Coefficient: 7.2 mV / K Voltage Tolerance: 2 % Zener Voltage: 11 V Other Names: 934060937115, BZX84J-B11 T/R