Результаты поиска CA3106E14S-6PF80F0F187
Найдено 1 результатов.
- TOSHIBA Semiconductor — TOSHIBA Semiconductor 2SK2331TE12R Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Finish: TIN LEAD Terminal Position: QUAD Number of Terminals: 4 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Case Connection: SOURCE Number of Elements: 1 Transistor Application: AMPLIFIER Transistor Element Material: GALLIUM ARSENIDE Power Dissipation Ambient-Max: 0.1500 W Channel Type: N-CHANNEL FET Technology: JUNCTION Operating Mode: DEPLETION Transistor Type: RF SMALL SIGNAL Power Gain-Min (Gp): 10 dB Drain Current-Max (ID): 0.1200 A Highest Frequency Band: X BAND