Результаты поиска C1206C564K3RACTU

Найдено 12 результатов.

• IRFR310TRPBF
  Vishay Semiconductors — Single-Gate MOSFET Transistors N-Chan 400V 1.7 Amp
• IRF9310TRPBF
  International Rectifier — MOSFET P-CH 30V 20A 8-SOIC
• IRF9310TRPBF
  International Rectifier — MOSFET P-CH 30V 20A 8-SOIC
• IRF9310TRPBF
  International Rectifier — MOSFET P-CH 30V 20A 8-SOIC
• IRFR9310TRPBF
  Vishay Semiconductors — Single-Gate MOSFET Transistors P-Chan 400V 1.8 Amp
• IRFL4310TRPBF
  International Rectifier — MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.2Ohm; ID 1.6A; SOT-223; PD 1W; VGS +/-20V; -55
• IRFL4310TRPBF
  International Rectifier — MOSFET N-CH 100V 1.6A SOT223
• IRFL4310TRPBF
  International Rectifier — MOSFET N-CH 100V 1.6A SOT223
• IRFL4310TRPBF
  International Rectifier — MOSFET N-CH 100V 1.6A SOT223
• IRFH9310TRPBF
  IR (International Rectifier) — IR (International Rectifier) IRFH9310TRPBF Continuous Drain Current: - 40 A Current - Continuous Drain (id) @ 25?° C: 21A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: - 30 V Fet Feature: Logic Level Gate Fet Type: MOSFET P-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 58nC @ 4.5V Gate Charge Qg: 58 nC Gate-source Breakdown Voltage: 20 V Input Capacitance (ciss) @ Vds: 5250pF @ 15V Mounting Type: * Package / Case: * Power - Max: 3.1W Power Dissipation: 3.1 W Rds On (max) @ Id, Vgs: 4.6 mOhm @ 21A, 10V Resistance Drain-source Rds (on): 7.1 mOhms Series: HEXFET?® Transistor Polarity: P-Channel Vgs(th) (max) @ Id: 2.4V @ 100?µA