Результаты поиска BUZ30A

Найдено 15 результатов.

• BUZ30A
  Infineon Technologies — MOSFET N-CH 200V 21A TO-220AB
• buz30ah
  Infineon Technologies —
• BUZ30A H
  Infineon Technologies — Infineon Technologies BUZ30A H RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 200 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 21 A Resistance Drain-Source RDS (on): 130 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: PG-TO-220-3 Minimum Operating Temperature: - 55 C Power Dissipation: 125 W Part # Aliases: BUZ30AHXK BUZ30AHXKSA1 SP000682990
• BUZ30ASMD
  Infineon — Low Voltage MOSFETs - Power MOSFET, 200V, DВІPAK, RDSon=0.13 Ohm, 21A, NL
• BUZ30A SMD
  Infineon — N-Channel enh. 200V...240V MOSFETs
• BUZ30AHXKSA1
  Infineon Technologies — Infineon Technologies BUZ30AHXKSA1 Mfr Package Description: GREEN, PLASTIC, TO-220, 3 PIN Lead Free: Yes EU RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: FLANGE MOUNT Terminal Form: THROUGH-HOLE Terminal Finish: NOT SPECIFIED Terminal Position: SINGLE Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Number of Elements: 1 Transistor Element Material: SILICON Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE POWER Drain Current-Max (ID): 21 A DS Breakdown Voltage-Min: 200 V Avalanche Energy Rating (Eas): 450 mJ Drain-source On Resistance-Max: 0.1300 ohm Pulsed Drain Current-Max (IDM): 84 A
• BUZ30AH3045A
  Infineon Technologies —
• BUZ30AH3045A
  Infineon Technologies —
• BUZ30A-E3045
  Infineon Technologies — Infineon Technologies BUZ30A-E3045 Mfr Package Description: TO-220AB, 3 PIN Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Finish: MATTE TIN Terminal Position: SINGLE Number of Terminals: 2 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE POWER Drain Current-Max (ID): 21 A DS Breakdown Voltage-Min: 200 V Avalanche Energy Rating (Eas): 450 mJ Drain-source On Resistance-Max: 0.1300 ohm Pulsed Drain Current-Max (IDM): 84 A
• BUZ30A E3045A
  Infineon Technologies — MOSFET N-CH 200V 21A TO-220AB