Результаты поиска BUK9518-55A,127

Найдено 2 результатов.

• BUK9518-55A,127
  NXP Semiconductors — NXP Semiconductors BUK9518-55A,127 Configuration: Single Continuous Drain Current: 61 A Current - Continuous Drain (id) @ 25?° C: 61A Drain To Source Voltage (vdss): 55V Drain-source Breakdown Voltage: 55 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 34nC @ 5V Gate-source Breakdown Voltage: +/- 15 V ID_COMPONENTS: 1950692 Input Capacitance (ciss) @ Vds: 2210pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 136W Power Dissipation: 136000 mW Rds On (max) @ Id, Vgs: 16 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.016 Ohm @ 10 V Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 15 V Resistance Drain-Source RDS (on): 0.016 Ohms Fall Time: 97 ns Rise Time: 126 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 95 ns Part # Aliases: BUK9518-55A Other Names: 934056811127, BUK9518-55A
• BUK9518-55A,127
  NXP Semiconductors — NXP Semiconductors BUK9518-55A,127 Configuration: Single Continuous Drain Current: 61 A Current - Continuous Drain (id) @ 25?° C: 61A Drain To Source Voltage (vdss): 55V Drain-source Breakdown Voltage: 55 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 34nC @ 5V Gate-source Breakdown Voltage: +/- 15 V ID_COMPONENTS: 1950692 Input Capacitance (ciss) @ Vds: 2210pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 136W Power Dissipation: 136000 mW Rds On (max) @ Id, Vgs: 16 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.016 Ohm @ 10 V Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 15 V Resistance Drain-Source RDS (on): 0.016 Ohms Fall Time: 97 ns Rise Time: 126 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 95 ns Part # Aliases: BUK9518-55A Other Names: 934056811127, BUK9518-55A