Результаты поиска BUK7620-55A,118

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• BUK7620-55A,118
  NXP Semiconductors — NXP Semiconductors BUK7620-55A,118 Configuration: Single Continuous Drain Current: 54 A Current - Continuous Drain (id) @ 25В° C: 54A Drain To Source Voltage (vdss): 55V Drain-source Breakdown Voltage: 55 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: - Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1951715 Input Capacitance (ciss) @ Vds: 1592pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: DВІPak, TO-263 (2 leads + tab) Power - Max: 118W Power Dissipation: 118000 mW Rds On (max) @ Id, Vgs: 20 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.02 Ohm @ 10 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.02 Ohms Fall Time: 40 ns Rise Time: 74 ns Factory Pack Quantity: 800 Typical Turn-Off Delay Time: 70 ns Part # Aliases: /T3 BUK7620-55A Other Names: 934056267118, BUK7620-55A /T3