Результаты поиска BUK7575-55A,127

Найдено 2 результатов.

• BUK7575-55A,127
  NXP Semiconductors — NXP Semiconductors BUK7575-55A,127 Configuration: Single Continuous Drain Current: 20.3 A Current - Continuous Drain (id) @ 25В° C: 20.3A Drain To Source Voltage (vdss): 55V Drain-source Breakdown Voltage: 55 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: - Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1950687 Input Capacitance (ciss) @ Vds: 483pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 62W Power Dissipation: 62000 mW Rds On (max) @ Id, Vgs: 75 mOhm @ 10A, 10V Resistance Drain-source Rds (on): 0.075 Ohm @ 10 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.075 Ohms Fall Time: 40 ns Rise Time: 50 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 70 ns Part # Aliases: BUK7575-55A Other Names: 934056259127, BUK7575-55A
• BUK7575-55A,127
  NXP Semiconductors — NXP Semiconductors BUK7575-55A,127 Configuration: Single Continuous Drain Current: 20.3 A Current - Continuous Drain (id) @ 25В° C: 20.3A Drain To Source Voltage (vdss): 55V Drain-source Breakdown Voltage: 55 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: - Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1950687 Input Capacitance (ciss) @ Vds: 483pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 62W Power Dissipation: 62000 mW Rds On (max) @ Id, Vgs: 75 mOhm @ 10A, 10V Resistance Drain-source Rds (on): 0.075 Ohm @ 10 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.075 Ohms Fall Time: 40 ns Rise Time: 50 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 70 ns Part # Aliases: BUK7575-55A Other Names: 934056259127, BUK7575-55A