Результаты поиска BUK754R0-55B,127

Найдено 2 результатов.

• BUK754R0-55B,127
  NXP Semiconductors — NXP Semiconductors BUK754R0-55B,127 Configuration: Single Continuous Drain Current: 193 A Current - Continuous Drain (id) @ 25В° C: 75A Drain To Source Voltage (vdss): 55V Drain-source Breakdown Voltage: 55 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 86nC @ 10V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1950593 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 300W Power Dissipation: 300000 mW Rds On (max) @ Id, Vgs: 4 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.004 Ohm @ 10 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.004 Ohms Fall Time: 41 ns Rise Time: 51 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 71 ns Part # Aliases: BUK754R0-55B Other Names: 934057090127::BUK754R0-55B::BUK754R0-55B
• BUK754R0-55B,127
  NXP Semiconductors — NXP Semiconductors BUK754R0-55B,127 Configuration: Single Continuous Drain Current: 193 A Current - Continuous Drain (id) @ 25В° C: 75A Drain To Source Voltage (vdss): 55V Drain-source Breakdown Voltage: 55 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 86nC @ 10V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1950593 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 300W Power Dissipation: 300000 mW Rds On (max) @ Id, Vgs: 4 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.004 Ohm @ 10 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.004 Ohms Fall Time: 41 ns Rise Time: 51 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 71 ns Part # Aliases: BUK754R0-55B Other Names: 934057090127::BUK754R0-55B::BUK754R0-55B