Результаты поиска BUK7514-55A,127

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• BUK7514-55A,127
  NXP Semiconductors — NXP Semiconductors BUK7514-55A,127 Configuration: Single Continuous Drain Current: 73 A Current - Continuous Drain (id) @ 25В° C: 73A Drain To Source Voltage (vdss): 55V Drain-source Breakdown Voltage: 55 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: - Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1950564 Input Capacitance (ciss) @ Vds: 2464pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 166W Power Dissipation: 149000 mW Rds On (max) @ Id, Vgs: 14 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.014 Ohm @ 10 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Other Names: 934055646127, BUK7514-55A