Результаты поиска BUK7508-55A,127
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- NXP Semiconductors — NXP Semiconductors BUK7508-55A,127 Configuration: Single Continuous Drain Current: 126 A Current - Continuous Drain (id) @ 25В° C: 75A Drain To Source Voltage (vdss): 55V Drain-source Breakdown Voltage: 55 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 76nC @ 0V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1950431 Input Capacitance (ciss) @ Vds: 4352pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 254W Power Dissipation: 254000 mW Rds On (max) @ Id, Vgs: 8 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.008 Ohm @ 10 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.008 Ohms Fall Time: 80 ns Rise Time: 94 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 100 ns Part # Aliases: BUK7508-55A Other Names: 934055642127, BUK7508-55A
