Результаты поиска BUK7506-75B,127

Найдено 2 результатов.

• BUK7506-75B,127
  NXP Semiconductors — NXP Semiconductors BUK7506-75B,127 Configuration: Single Continuous Drain Current: 159 A Current - Continuous Drain (id) @ 25?° C: 75A Drain To Source Voltage (vdss): 75V Drain-source Breakdown Voltage: 75 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 91nC @ 10V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1950614 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 300W Power Dissipation: 300000 mW Rds On (max) @ Id, Vgs: 5.6 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.0056 Ohm @ 10 V Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 75 V Gate-Source Breakdown Voltage: +/- 20 V Rds On: 5.6 mOhms Brand: NXP Semiconductors Fall Time: 48 ns Rise Time: 56 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 128 ns Part # Aliases: BUK7506-75B Other Names: 934057109127::BUK7506-75B::BUK7506-75B
• BUK7506-75B,127
  NXP Semiconductors — NXP Semiconductors BUK7506-75B,127 Configuration: Single Continuous Drain Current: 159 A Current - Continuous Drain (id) @ 25?° C: 75A Drain To Source Voltage (vdss): 75V Drain-source Breakdown Voltage: 75 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 91nC @ 10V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1950614 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 300W Power Dissipation: 300000 mW Rds On (max) @ Id, Vgs: 5.6 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.0056 Ohm @ 10 V Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 75 V Gate-Source Breakdown Voltage: +/- 20 V Rds On: 5.6 mOhms Brand: NXP Semiconductors Fall Time: 48 ns Rise Time: 56 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 128 ns Part # Aliases: BUK7506-75B Other Names: 934057109127::BUK7506-75B::BUK7506-75B