Результаты поиска BT152B-600R,118
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- NXP Semiconductors — NXP Semiconductors BT152B-600R,118 Breakover Current Ibo Max: 220 A Current - Gate Trigger (igt) (max): 32mA Current - Hold (ih) (max): 60mA Current - Non Rep. Surge 50, 60hz (itsm): 200A, 220A Current - Off State (max): 1mA Current - On State (it (av)) (max): 13A Current - On State (it (rms) (max): 20A Current - On State (it (rms)) (max): 20A Forward Voltage Drop: 1.75 V Gate Trigger Current (igt): 32 mA Gate Trigger Voltage (vgt): 1.5 V Holding Current (ih Max): 60 mA ID_COMPONENTS: 1948366 Maximum Gate Peak Inverse Voltage: 5 V Mounting Style: SMD/SMT Mounting Type: Surface Mount Off-state Leakage Current @ Vdrm Idrm: 1 mA Operating Temperature: -40В°C ~ 125В°C Package / Case: DВІPak, TO-263 (2 leads + tab) Rated Repetitive Off-state Voltage Vdrm: 650 V Scr Type: Standard Recovery Voltage - Gate Trigger (vgt) (max): 1.5V Voltage - Off State: 650V Voltage - On State (vtm) (max): 1.75V Other Names: 934048260118, BT152B-600R /T3