Результаты поиска BST82,215

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• BST82,215
  NXP Semiconductors — NXP Semiconductors BST82,215 Configuration: Single Continuous Drain Current: 0.19 A Current - Continuous Drain (id) @ 25?° C: 190mA Drain To Source Voltage (vdss): 100V Drain-source Breakdown Voltage: 100 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: - Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1951745 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Power - Max: 830mW Power Dissipation: 830 mW Rds On (max) @ Id, Vgs: 10 Ohm @ 150mA, 5V Resistance Drain-source Rds (on): 10 Ohm @ 5 V Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2V @ 1mA Other Names: 933733110215::BST82 T/R::BST82 T/R