Результаты поиска BSS123E6327
Найдено 3 результатов.
- Infineon Technologies — MOSFET N-CH 100V 170MA SOT-23
- Infineon Technologies — MOSFET N-CH 100V 170MA SOT-23
- Infineon Technologies — Infineon Technologies BSS123E-6327 Mfr Package Description: SOT-23, 3 PIN Lead Free: Yes EU RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Finish: MATTE TIN Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Number of Elements: 1 Transistor Element Material: SILICON Power Dissipation Ambient-Max: 0.3600 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE SMALL SIGNAL Drain Current-Max (ID): 0.1700 A DS Breakdown Voltage-Min: 100 V Drain-source On Resistance-Max: 6 ohm