Результаты поиска BSR16,215

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• BSR16,215
  NXP Semiconductors — NXP Semiconductors BSR16,215 Current - Collector (ic) (max): 600mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz ID_COMPONENTS: 1959980 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3в„ў, SSD3, SST3 Power - Max: 250mW Series: - Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 1.6V @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 60V RoHS: yes Configuration: Single Transistor Polarity: PNP Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 60 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.6 A Gain Bandwidth Product fT: 200 MHz (Min) DC Collector/Base Gain hfe Min: 75 at 0.1 mA at 10 V, 100 at 1 mA at 10 V, 100 at 10 mA at 10 V, 100 at 150 mA at 10 V, 50 at 500 mA at 10 V Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 250 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 3000 Other Names: 933508400215