Результаты поиска BSP123 L6327

Найдено 2 результатов.

• BSP123 L6327
  Infineon Technologies — Infineon Technologies BSP123 L6327 Configuration: Single Dual Drain Continuous Drain Current: 0.37 A Drain-source Breakdown Voltage: 100 V Gate-source Breakdown Voltage: +/- 20 V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-223 Power Dissipation: 1790 mW Resistance Drain-source Rds (on): 6 Ohm @ 10 V Transistor Polarity: N-Channel Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 100 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 6000 mOhms Fall Time: 3.2 ns Rise Time: 3.2 ns Factory Pack Quantity: 1000 Typical Turn-Off Delay Time: 8.7 ns Part # Aliases: BSP123L6327HTSA1 BSP123L6327XT SP000089202 Other Names: BSP123L6327XT
• BSP123 L6327
  Infineon Technologies — Infineon Technologies BSP123 L6327 Configuration: Single Dual Drain Continuous Drain Current: 0.37 A Drain-source Breakdown Voltage: 100 V Gate-source Breakdown Voltage: +/- 20 V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-223 Power Dissipation: 1790 mW Resistance Drain-source Rds (on): 6 Ohm @ 10 V Transistor Polarity: N-Channel Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 100 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 6000 mOhms Fall Time: 3.2 ns Rise Time: 3.2 ns Factory Pack Quantity: 1000 Typical Turn-Off Delay Time: 8.7 ns Part # Aliases: BSP123L6327HTSA1 BSP123L6327XT SP000089202 Other Names: BSP123L6327XT