Результаты поиска BSH203,215

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• BSH203,215
  NXP Semiconductors — NXP Semiconductors BSH203,215 Current - Continuous Drain (id) @ 25?° C: 470mA Drain To Source Voltage (vdss): 30V Fet Feature: Logic Level Gate Fet Type: MOSFET P-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 2.2nC @ 4.5V Input Capacitance (ciss) @ Vds: 110pF @ 24V Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Power - Max: 417mW Rds On (max) @ Id, Vgs: 900 mOhm @ 280mA, 4.5V Series: - Vgs(th) (max) @ Id: 680mV @ 1mA Product Category: MOSFET RoHS: yes Transistor Polarity: P-Channel Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 8 V Continuous Drain Current: 0.47 A Resistance Drain-Source RDS (on): 900 mOhms at 4.5 V Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Fall Time: 4.5 ns Minimum Operating Temperature: - 55 C Power Dissipation: 417 mW Rise Time: 4.5 ns Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 45 ns Part # Aliases: BSH203 T/R Other Names: 934054719215, BSH203 T/R