Результаты поиска BSH201,215

Найдено 1 результатов.

• BSH201,215
  NXP Semiconductors — NXP Semiconductors BSH201,215 Configuration: Single Continuous Drain Current: 0.3 A Current - Continuous Drain (id) @ 25В° C: 300mA Drain To Source Voltage (vdss): 60V Drain-source Breakdown Voltage: 60 V Fet Feature: Logic Level Gate Fet Type: MOSFET P-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 3nC @ 10V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1951744 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3в„ў, SSD3, SST3 Power - Max: 417mW Power Dissipation: 417 mW Rds On (max) @ Id, Vgs: 2.5 Ohm @ 160mA, 10V Resistance Drain-source Rds (on): 2.5 Ohm @ 10 V Series: - Transistor Polarity: P-Channel Vgs(th) (max) @ Id: 1.9V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 2500 mOhms Fall Time: 4.5 ns Rise Time: 4.5 ns Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 45 ns Part # Aliases: BSH201 T/R Other Names: 934054717215::BSH201 T/R::BSH201 T/R