Результаты поиска BSH103,215

Найдено 2 результатов.

• BSH103.215
  NXP Semiconductors — NXP Semiconductors BSH103.215 Continuous Drain Current Id: 850mA Drain Source Voltage Vds: 30V On Resistance Rds(on): 500mohm Operating Temperature: RoHS Compliant Rds(on) Test Voltage Vgs: 4.5V Rohs Compliant: Yes Threshold Voltage Vgs Typ: 400mV Transistor Polarity: N Channel Voltage Vgs Max: 8V
• BSH103,215
  NXP Semiconductors — NXP Semiconductors BSH103,215 Configuration: Single Continuous Drain Current: 0.85 A Current - Continuous Drain (id) @ 25В° C: 850mA Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 2.1nC @ 4.5V Gate-source Breakdown Voltage: +/- 8 V ID_COMPONENTS: 1951728 Input Capacitance (ciss) @ Vds: 83pF @ 24V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3в„ў, SSD3, SST3 Power - Max: 540mW Power Dissipation: 500 mW Rds On (max) @ Id, Vgs: 400 mOhm @ 500mA, 4.5V Resistance Drain-source Rds (on): 0.4 Ohm @ 4.5 V Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 400mV @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 8 V Resistance Drain-Source RDS (on): 400 mOhms at 4.5 V Fall Time: 3.5 ns Rise Time: 3.5 ns Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 20 ns Part # Aliases: BSH103 T/R Other Names: 568-5013-2, 934054713215, BSH103 T/R, BSH103,215