Результаты поиска BSC0901NSI

Найдено 3 результатов.

• BSC0901NSI
  Infineon Technologies —
• BSC0901NSIXT
  Infineon Technologies — Infineon Technologies BSC0901NSIXT RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 100 A Resistance Drain-Source RDS (on): 2.8 mOhms at 4.5 V Configuration: Single Quad Drain Triple Source Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: PG-TDSON-8 Fall Time: 3.8 ns Gate Charge Qg: 24 nC Minimum Operating Temperature: - 55 C Power Dissipation: 48 W Rise Time: 5.4 ns Typical Turn-Off Delay Time: 20 ns Part # Aliases: BSC0901NSI BSC0901NSIATMA1
• BSC0901NSIATMA1
  Infineon Technologies — Infineon Technologies BSC0901NSIATMA1 Mfr Package Description: GREEN, PLASTIC, TDSON-8 EU RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: FLAT Terminal Finish: NOT SPECIFIED Terminal Position: DUAL Number of Terminals: 5 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Case Connection: DRAIN Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE POWER Drain Current-Max (ID): 28 A DS Breakdown Voltage-Min: 30 V Avalanche Energy Rating (Eas): 45 mJ Drain-source On Resistance-Max: 0.0026 ohm Pulsed Drain Current-Max (IDM): 400 A